High-Q CMOS-integrated photonic crystal microcavity devices
Integrated optical resonators are necessary or beneficial in realizations of various functions in scaled photonic platforms, including filtering, modulation, and detection in classical communication systems, optical sensing, as well as addressing and control of solid state emitters for quantum techn...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | en_US |
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Nature Publishing Group
2014
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| Online Access: | http://hdl.handle.net/1721.1/87589 https://orcid.org/0000-0002-0917-7182 https://orcid.org/0000-0003-0420-2235 |
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| author | Tehar-Zahav, Ofer Sternberg, Zvi Bafrali, Reha Meade, Roy Ram, Rajeev J. Mehta, Karan Kartik Orcutt, Jason Scott |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Tehar-Zahav, Ofer Sternberg, Zvi Bafrali, Reha Meade, Roy Ram, Rajeev J. Mehta, Karan Kartik Orcutt, Jason Scott |
| author_sort | Tehar-Zahav, Ofer |
| collection | MIT |
| description | Integrated optical resonators are necessary or beneficial in realizations of various functions in scaled photonic platforms, including filtering, modulation, and detection in classical communication systems, optical sensing, as well as addressing and control of solid state emitters for quantum technologies. Although photonic crystal (PhC) microresonators can be advantageous to the more commonly used microring devices due to the former's low mode volumes, fabrication of PhC cavities has typically relied on electron-beam lithography, which precludes integration with large-scale and reproducible CMOS fabrication. Here, we demonstrate wavelength-scale polycrystalline silicon (pSi) PhC microresonators with Qs up to 60,000 fabricated within a bulk CMOS process. Quasi-1D resonators in lateral p-i-n structures allow for resonant defect-state photodetection in all-silicon devices, exhibiting voltage-dependent quantum efficiencies in the range of a few 10 s of %, few-GHz bandwidths, and low dark currents, in devices with loaded Qs in the range of 4,300–9,300; one device, for example, exhibited a loaded Q of 4,300, 25% quantum efficiency (corresponding to a responsivity of 0.31 A/W), 3 GHz bandwidth, and 30 nA dark current at a reverse bias of 30 V. This work demonstrates the possibility for practical integration of PhC microresonators with active electro-optic capability into large-scale silicon photonic systems. |
| first_indexed | 2024-09-23T10:22:29Z |
| format | Article |
| id | mit-1721.1/87589 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T10:22:29Z |
| publishDate | 2014 |
| publisher | Nature Publishing Group |
| record_format | dspace |
| spelling | mit-1721.1/875892022-09-26T17:27:02Z High-Q CMOS-integrated photonic crystal microcavity devices Tehar-Zahav, Ofer Sternberg, Zvi Bafrali, Reha Meade, Roy Ram, Rajeev J. Mehta, Karan Kartik Orcutt, Jason Scott Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Research Laboratory of Electronics Mehta, Karan Kartik Orcutt, Jason Scott Ram, Rajeev J. Integrated optical resonators are necessary or beneficial in realizations of various functions in scaled photonic platforms, including filtering, modulation, and detection in classical communication systems, optical sensing, as well as addressing and control of solid state emitters for quantum technologies. Although photonic crystal (PhC) microresonators can be advantageous to the more commonly used microring devices due to the former's low mode volumes, fabrication of PhC cavities has typically relied on electron-beam lithography, which precludes integration with large-scale and reproducible CMOS fabrication. Here, we demonstrate wavelength-scale polycrystalline silicon (pSi) PhC microresonators with Qs up to 60,000 fabricated within a bulk CMOS process. Quasi-1D resonators in lateral p-i-n structures allow for resonant defect-state photodetection in all-silicon devices, exhibiting voltage-dependent quantum efficiencies in the range of a few 10 s of %, few-GHz bandwidths, and low dark currents, in devices with loaded Qs in the range of 4,300–9,300; one device, for example, exhibited a loaded Q of 4,300, 25% quantum efficiency (corresponding to a responsivity of 0.31 A/W), 3 GHz bandwidth, and 30 nA dark current at a reverse bias of 30 V. This work demonstrates the possibility for practical integration of PhC microresonators with active electro-optic capability into large-scale silicon photonic systems. United States. Defense Advanced Research Projects Agency. Photonically Optimized Embedded Microprocessors United States. Dept. of Energy (Science Graduate Fellowship) 2014-05-30T17:14:21Z 2014-05-30T17:14:21Z 2014-02 2013-08 Article http://purl.org/eprint/type/JournalArticle 2045-2322 http://hdl.handle.net/1721.1/87589 Mehta, Karan K., Jason S. Orcutt, Ofer Tehar-Zahav, Zvi Sternberg, Reha Bafrali, Roy Meade, and Rajeev J. Ram. “High-Q CMOS-Integrated Photonic Crystal Microcavity Devices.” Sci. Rep. 4 (February 12, 2014). https://orcid.org/0000-0002-0917-7182 https://orcid.org/0000-0003-0420-2235 en_US http://dx.doi.org/10.1038/srep04077 Scientific Reports Creative Commons Attribution-Noncommercial http://creativecommons.org/licenses/by-nc-sa/3.0 application/pdf Nature Publishing Group Nature Publishing Group |
| spellingShingle | Tehar-Zahav, Ofer Sternberg, Zvi Bafrali, Reha Meade, Roy Ram, Rajeev J. Mehta, Karan Kartik Orcutt, Jason Scott High-Q CMOS-integrated photonic crystal microcavity devices |
| title | High-Q CMOS-integrated photonic crystal microcavity devices |
| title_full | High-Q CMOS-integrated photonic crystal microcavity devices |
| title_fullStr | High-Q CMOS-integrated photonic crystal microcavity devices |
| title_full_unstemmed | High-Q CMOS-integrated photonic crystal microcavity devices |
| title_short | High-Q CMOS-integrated photonic crystal microcavity devices |
| title_sort | high q cmos integrated photonic crystal microcavity devices |
| url | http://hdl.handle.net/1721.1/87589 https://orcid.org/0000-0002-0917-7182 https://orcid.org/0000-0003-0420-2235 |
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