Comparing directed efficiency of III-nitride nanowire light-emitting diodes
III-nitride-based nanowires are a promising platform for solid-state lighting. III-nitride nanowires that act as natural waveguides to enhance directed extraction have previously been shown to be free of extended defects even on foreign substrates, such as silicon. While the efficiency of nanowire-b...
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| Format: | Article |
| Language: | en_US |
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SPIE
2014
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| Online Access: | http://hdl.handle.net/1721.1/87660 |
| _version_ | 1826211450426753024 |
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| author | Gradecak, Silvija Chesin, Jordan Paul |
| author2 | Massachusetts Institute of Technology. Department of Materials Science and Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Materials Science and Engineering Gradecak, Silvija Chesin, Jordan Paul |
| author_sort | Gradecak, Silvija |
| collection | MIT |
| description | III-nitride-based nanowires are a promising platform for solid-state lighting. III-nitride nanowires that act as natural waveguides to enhance directed extraction have previously been shown to be free of extended defects even on foreign substrates, such as silicon. While the efficiency of nanowire-based light-emitting diodes (LEDs) has been investigated, there has yet to be a comparison of heterostructures based on nanowires grown in different crystallographic directions. We compared the directed external quantum efficiency (EQE) of III-nitride LEDs on silicon based on axial and radial nanowire heterostructures, considering m- and c-directional nanowires. The directed extraction efficiency was calculated using photonic simulations, and the internal quantum efficiency (IQE) was estimated using the A-B-C model. We found that m-directional axial heterostructures have the highest directed extraction efficiency, due to the strong polarization anisotropy of III-nitrides, and display similar IQE as c-directional axial heterostructures. By combining IQE and directed extraction, a range of directed expected EQEs reveal that m-directional axial heterostructures have EQEs up to three times that of c-directional axial heterostructures, providing guidelines for the design of future nanowire-based LEDs. |
| first_indexed | 2024-09-23T15:06:04Z |
| format | Article |
| id | mit-1721.1/87660 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T15:06:04Z |
| publishDate | 2014 |
| publisher | SPIE |
| record_format | dspace |
| spelling | mit-1721.1/876602022-09-29T12:41:06Z Comparing directed efficiency of III-nitride nanowire light-emitting diodes Gradecak, Silvija Chesin, Jordan Paul Massachusetts Institute of Technology. Department of Materials Science and Engineering Chesin, Jordan Paul Gradecak, Silvija III-nitride-based nanowires are a promising platform for solid-state lighting. III-nitride nanowires that act as natural waveguides to enhance directed extraction have previously been shown to be free of extended defects even on foreign substrates, such as silicon. While the efficiency of nanowire-based light-emitting diodes (LEDs) has been investigated, there has yet to be a comparison of heterostructures based on nanowires grown in different crystallographic directions. We compared the directed external quantum efficiency (EQE) of III-nitride LEDs on silicon based on axial and radial nanowire heterostructures, considering m- and c-directional nanowires. The directed extraction efficiency was calculated using photonic simulations, and the internal quantum efficiency (IQE) was estimated using the A-B-C model. We found that m-directional axial heterostructures have the highest directed extraction efficiency, due to the strong polarization anisotropy of III-nitrides, and display similar IQE as c-directional axial heterostructures. By combining IQE and directed extraction, a range of directed expected EQEs reveal that m-directional axial heterostructures have EQEs up to three times that of c-directional axial heterostructures, providing guidelines for the design of future nanowire-based LEDs. United States. Dept. of Energy. Office of Basic Energy Sciences (Award DE-SC0001088) 2014-06-05T18:11:31Z 2014-06-05T18:11:31Z 2014-02 2014-01 Article http://purl.org/eprint/type/JournalArticle 1934-2608 http://hdl.handle.net/1721.1/87660 Chesin, Jordan, and Silvija Gradecak. “Comparing Directed Efficiency of III-Nitride Nanowire Light-Emitting Diodes.” J. Nanophoton 8, no. 1 (February 13, 2014): 083095. © 2014 Society of Photo-Optical Instrumentation Engineers (SPIE) en_US http://dx.doi.org/10.1117/1.jnp.8.083095 Journal of Nanophotonics Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf SPIE SPIE |
| spellingShingle | Gradecak, Silvija Chesin, Jordan Paul Comparing directed efficiency of III-nitride nanowire light-emitting diodes |
| title | Comparing directed efficiency of III-nitride nanowire light-emitting diodes |
| title_full | Comparing directed efficiency of III-nitride nanowire light-emitting diodes |
| title_fullStr | Comparing directed efficiency of III-nitride nanowire light-emitting diodes |
| title_full_unstemmed | Comparing directed efficiency of III-nitride nanowire light-emitting diodes |
| title_short | Comparing directed efficiency of III-nitride nanowire light-emitting diodes |
| title_sort | comparing directed efficiency of iii nitride nanowire light emitting diodes |
| url | http://hdl.handle.net/1721.1/87660 |
| work_keys_str_mv | AT gradecaksilvija comparingdirectedefficiencyofiiinitridenanowirelightemittingdiodes AT chesinjordanpaul comparingdirectedefficiencyofiiinitridenanowirelightemittingdiodes |