Ge photodetectors for Si microphotonics
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2001.
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| Format: | Thesis |
| Language: | eng |
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Massachusetts Institute of Technology
2005
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| Online Access: | http://hdl.handle.net/1721.1/8782 |
| _version_ | 1826204789279555584 |
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| author | Luan Hsin-Chiao, 1969- |
| author2 | Lionel Cooper Kimerling. |
| author_facet | Lionel Cooper Kimerling. Luan Hsin-Chiao, 1969- |
| author_sort | Luan Hsin-Chiao, 1969- |
| collection | MIT |
| description | Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2001. |
| first_indexed | 2024-09-23T13:01:25Z |
| format | Thesis |
| id | mit-1721.1/8782 |
| institution | Massachusetts Institute of Technology |
| language | eng |
| last_indexed | 2024-09-23T13:01:25Z |
| publishDate | 2005 |
| publisher | Massachusetts Institute of Technology |
| record_format | dspace |
| spelling | mit-1721.1/87822019-04-11T04:43:18Z Ge photodetectors for Si microphotonics Luan Hsin-Chiao, 1969- Lionel Cooper Kimerling. Massachusetts Institute of Technology. Dept. of Materials Science and Engineering. Massachusetts Institute of Technology. Dept. of Materials Science and Engineering. Materials Science and Engineering. Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2001. Includes bibliographical references (p. 143-157). This thesis demonstrates the integration of pure Ge near-infrared photodetectors on Si. Ge epilayers were grown directly on Si by a two-step ultra-high-vacuum/chemical-vapor-deposition (UHV/CVD) process. This work conclusively proves that threading-dislocation densities in the Ge epilayers, measured both by plan-view transmission electron microscopy and etch-pit-density (EPD) counting, were reduced by cyclic thermal annealing. Additionally, Ge mesas with no threading dislocations as measured by EPD were also demonstrated. The removal of threading-dislocations can be attributed to the thermal stress induced dislocation glide and reactions. Using the annealed Ge epilayers grown on Si, p-i-n Ge photodetectors with maximum responsivities of 770 mA/W at 1.3 μm were fabricated. Finally, to allow the integration of Ge epilayers in Si microelectronic processing, the protection and passivation of Ge was investigated. The passivation was provided by the oxidation of Si epilayers grown on Ge. Capacitance-voltage characteristics of metal-oxide-semiconductor devices demonstrated the high quality of the passivation with the measured interface state density of 4 x 1011 cm-2eV- 1. by Hsin-Chiao Luan. Ph.D. 2005-08-23T15:17:16Z 2005-08-23T15:17:16Z 2001 2001 Thesis http://hdl.handle.net/1721.1/8782 48171997 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 157 p. 14362909 bytes 14362668 bytes application/pdf application/pdf application/pdf Massachusetts Institute of Technology |
| spellingShingle | Materials Science and Engineering. Luan Hsin-Chiao, 1969- Ge photodetectors for Si microphotonics |
| title | Ge photodetectors for Si microphotonics |
| title_full | Ge photodetectors for Si microphotonics |
| title_fullStr | Ge photodetectors for Si microphotonics |
| title_full_unstemmed | Ge photodetectors for Si microphotonics |
| title_short | Ge photodetectors for Si microphotonics |
| title_sort | ge photodetectors for si microphotonics |
| topic | Materials Science and Engineering. |
| url | http://hdl.handle.net/1721.1/8782 |
| work_keys_str_mv | AT luanhsinchiao1969 gephotodetectorsforsimicrophotonics |