Deeply-scaled GaN high electron mobility transistors for RF applications

Deeply-scaled GaN high electron mobility transistors for RF applications

Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2014.

Bibliographic Details
Main Author:	Lee, Dong Seup
Other Authors:	Tomás Palacios.
Format:	Thesis
Language:	eng
Published:	Massachusetts Institute of Technology 2014
Subjects:	Electrical Engineering and Computer Science.
Online Access:	http://hdl.handle.net/1721.1/87927

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