Nanostructuring magnetic thin films using interference lithography
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2000.
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| Format: | Thesis |
| Language: | eng |
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Massachusetts Institute of Technology
2005
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| Online Access: | http://hdl.handle.net/1721.1/8812 |
| _version_ | 1826195977888858112 |
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| author | Walsh, Michael E. (Michael Edward), 1975- |
| author2 | Henry I. Smith. |
| author_facet | Henry I. Smith. Walsh, Michael E. (Michael Edward), 1975- |
| author_sort | Walsh, Michael E. (Michael Edward), 1975- |
| collection | MIT |
| description | Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2000. |
| first_indexed | 2024-09-23T10:18:54Z |
| format | Thesis |
| id | mit-1721.1/8812 |
| institution | Massachusetts Institute of Technology |
| language | eng |
| last_indexed | 2024-09-23T10:18:54Z |
| publishDate | 2005 |
| publisher | Massachusetts Institute of Technology |
| record_format | dspace |
| spelling | mit-1721.1/88122019-04-11T12:13:45Z Nanostructuring magnetic thin films using interference lithography Walsh, Michael E. (Michael Edward), 1975- Henry I. Smith. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Electrical Engineering and Computer Science. Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2000. Includes bibliographical references. Proliferation of data caused by rapid increases in computer power and the rise of the internet have caused an acute need for advanced data storage technology. Patterned magnetic media and magneto-resistive random-access memory (MRAM) can potentially fulfill this need. The technique of interference lithography is examined in the context of patterning ~100 nm size features. An interferometer is designed and built which will allow exposure of gratings and grids with a minimum spatial period of ~ 170 nm. Etching methods, especially ion-beam etching, or ion milling, is investigated as the optimal choice for patterning sub-100 nm features in thin magnetic films and multi-layer thin film stacks. The advantages and disadvantages of a variety of resist stacks and etch masks are presented. An optimal process for linewidth control and preservation of magnetic properties is found to include a thin phase-shifting resist stack and a tungsten hardmask. by Michael E. Walsh. S.M. 2005-08-23T15:32:04Z 2005-08-23T15:32:04Z 2000 2000 Thesis http://hdl.handle.net/1721.1/8812 48253228 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 85 leaves 8799753 bytes 8799513 bytes application/pdf application/pdf application/pdf Massachusetts Institute of Technology |
| spellingShingle | Electrical Engineering and Computer Science. Walsh, Michael E. (Michael Edward), 1975- Nanostructuring magnetic thin films using interference lithography |
| title | Nanostructuring magnetic thin films using interference lithography |
| title_full | Nanostructuring magnetic thin films using interference lithography |
| title_fullStr | Nanostructuring magnetic thin films using interference lithography |
| title_full_unstemmed | Nanostructuring magnetic thin films using interference lithography |
| title_short | Nanostructuring magnetic thin films using interference lithography |
| title_sort | nanostructuring magnetic thin films using interference lithography |
| topic | Electrical Engineering and Computer Science. |
| url | http://hdl.handle.net/1721.1/8812 |
| work_keys_str_mv | AT walshmichaelemichaeledward1975 nanostructuringmagneticthinfilmsusinginterferencelithography |