Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide
The p–n junction is the functional element of many electronic and optoelectronic devices, including diodes, bipolar transistors, photodetectors, light-emitting diodes and solar cells. In conventional p–n junctions, the adjacent p- and n-type regions of a semiconductor are formed by chemical doping....
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Nature Publishing Group
2014
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| Online Access: | http://hdl.handle.net/1721.1/88467 https://orcid.org/0000-0003-1017-0233 https://orcid.org/0000-0001-8217-8213 https://orcid.org/0000-0002-8287-1373 |