Optimal tunneling enhances the quantum photovoltaic effect in double quantum dots

We investigate the quantum photovoltaic effect in double quantum dots by applying the nonequilibrium quantum master equation. A drastic suppression of the photovoltaic current is observed near the open circuit voltage, which leads to a large filling factor. We find that there always exists an optima...

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Bibliographic Details
Main Authors: Wang, Chen, Ren, Jie, Cao, Jianshu
Other Authors: Massachusetts Institute of Technology. Department of Chemistry
Format: Article
Language:en_US
Published: Institute of Physics Publishing and Deutsche Physikalische Gesellschaft 2014
Online Access:http://hdl.handle.net/1721.1/88603
https://orcid.org/0000-0001-7616-7809
Description
Summary:We investigate the quantum photovoltaic effect in double quantum dots by applying the nonequilibrium quantum master equation. A drastic suppression of the photovoltaic current is observed near the open circuit voltage, which leads to a large filling factor. We find that there always exists an optimal inter-dot tunneling that significantly enhances the photovoltaic current. Maximal output power will also be obtained around the optimal inter-dot tunneling. Moreover, the open circuit voltage behaves approximately as the product of the eigen-level gap and the Carnot efficiency. These results suggest a great potential for double quantum dots as efficient photovoltaic devices.