Mapping strain rate dependence of dislocation-defect interactions by atomistic simulations
Probing the mechanisms of defect–defect interactions at strain rates lower than 10[superscript 6] s[superscript −1] is an unresolved challenge to date to molecular dynamics (MD) techniques. Here we propose an original atomistic approach based on transition state theory and the concept of a strain-de...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
National Academy of Sciences (U.S.)
2014
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| Online Access: | http://hdl.handle.net/1721.1/89079 https://orcid.org/0000-0002-2688-5666 https://orcid.org/0000-0002-2727-0137 |