Switchable piezoelectric transduction in AlGaN/GaN MEMS resonators
This work presents a new switching mechanism in piezoelectric transduction of AlGaN/GaN bulk acoustic resonators. A piezoelectric transducer is formed in the AlGaN, between a top Schottky electrode and a 2D electron gas (2DEG) as a second electrode. In the off state, this 2DEG can be depleted by app...
Main Authors: | , |
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Other Authors: | |
Format: | Article |
Language: | en_US |
Published: |
Institute of Electrical and Electronics Engineers (IEEE)
2014
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Online Access: | http://hdl.handle.net/1721.1/91021 |