Pressure variation of Rashba spin splitting toward topological transition in the polar semiconductor BiTeI
BiTeI is a polar semiconductor with gigantic Rashba spin-split bands in bulk. We have investigated the effect of pressure on the electronic structure of this material via magnetotransport. Periods of Shubunikov–de Haas (SdH) oscillations originating from the spin-split outer Fermi surface and inner...
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| Format: | Article |
| Language: | English |
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American Physical Society
2014
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| Online Access: | http://hdl.handle.net/1721.1/91592 https://orcid.org/0000-0003-0325-5204 |
| _version_ | 1826211150124023808 |
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| author | Ideue, T. Bahramy, M. S. Murakawa, H. Kaneko, Y. Nagaosa, N. Tokura, Y. Checkelsky, Joseph George |
| author2 | Massachusetts Institute of Technology. Department of Physics |
| author_facet | Massachusetts Institute of Technology. Department of Physics Ideue, T. Bahramy, M. S. Murakawa, H. Kaneko, Y. Nagaosa, N. Tokura, Y. Checkelsky, Joseph George |
| author_sort | Ideue, T. |
| collection | MIT |
| description | BiTeI is a polar semiconductor with gigantic Rashba spin-split bands in bulk. We have investigated the effect of pressure on the electronic structure of this material via magnetotransport. Periods of Shubunikov–de Haas (SdH) oscillations originating from the spin-split outer Fermi surface and inner Fermi surface show disparate responses to pressure, while the carrier number derived from the Hall effect is unchanged with pressure. The associated parameters which characterize the spin-split band structure are strongly dependent on pressure, reflecting the pressure-induced band deformation. We find the SdH oscillations and transport response are consistent with the theoretically proposed pressure-induced band deformation leading to a topological phase transition. Our analysis suggests the critical pressure for the quantum phase transition near P[subscript c] = 3.5 GPa. |
| first_indexed | 2024-09-23T15:01:22Z |
| format | Article |
| id | mit-1721.1/91592 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T15:01:22Z |
| publishDate | 2014 |
| publisher | American Physical Society |
| record_format | dspace |
| spelling | mit-1721.1/915922022-09-29T12:05:49Z Pressure variation of Rashba spin splitting toward topological transition in the polar semiconductor BiTeI Ideue, T. Bahramy, M. S. Murakawa, H. Kaneko, Y. Nagaosa, N. Tokura, Y. Checkelsky, Joseph George Massachusetts Institute of Technology. Department of Physics Checkelsky, Joseph George BiTeI is a polar semiconductor with gigantic Rashba spin-split bands in bulk. We have investigated the effect of pressure on the electronic structure of this material via magnetotransport. Periods of Shubunikov–de Haas (SdH) oscillations originating from the spin-split outer Fermi surface and inner Fermi surface show disparate responses to pressure, while the carrier number derived from the Hall effect is unchanged with pressure. The associated parameters which characterize the spin-split band structure are strongly dependent on pressure, reflecting the pressure-induced band deformation. We find the SdH oscillations and transport response are consistent with the theoretically proposed pressure-induced band deformation leading to a topological phase transition. Our analysis suggests the critical pressure for the quantum phase transition near P[subscript c] = 3.5 GPa. Japan. Ministry of Education, Culture, Sports, Science and Technology (Grant-in-Aid for Scientific Research 24224009) Japan Society for the Promotion of Science. Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program) 2014-11-17T17:38:41Z 2014-11-17T17:38:41Z 2014-10 2014-10 2014-10-29T22:00:07Z Article http://purl.org/eprint/type/JournalArticle 1098-0121 1550-235X http://hdl.handle.net/1721.1/91592 Ideue, T., J. G. Checkelsky, M. S. Bahramy, H. Murakawa, Y. Kaneko, N. Nagaosa, and Y. Tokura. “Pressure Variation of Rashba Spin Splitting Toward Topological Transition in the Polar Semiconductor BiTeI.” Phys. Rev. B 90, no. 16 (October 2014). © 2014 American Physical Society https://orcid.org/0000-0003-0325-5204 en http://dx.doi.org/10.1103/PhysRevB.90.161107 Physical Review B Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. American Physical Society application/pdf American Physical Society American Physical Society |
| spellingShingle | Ideue, T. Bahramy, M. S. Murakawa, H. Kaneko, Y. Nagaosa, N. Tokura, Y. Checkelsky, Joseph George Pressure variation of Rashba spin splitting toward topological transition in the polar semiconductor BiTeI |
| title | Pressure variation of Rashba spin splitting toward topological transition in the polar semiconductor BiTeI |
| title_full | Pressure variation of Rashba spin splitting toward topological transition in the polar semiconductor BiTeI |
| title_fullStr | Pressure variation of Rashba spin splitting toward topological transition in the polar semiconductor BiTeI |
| title_full_unstemmed | Pressure variation of Rashba spin splitting toward topological transition in the polar semiconductor BiTeI |
| title_short | Pressure variation of Rashba spin splitting toward topological transition in the polar semiconductor BiTeI |
| title_sort | pressure variation of rashba spin splitting toward topological transition in the polar semiconductor bitei |
| url | http://hdl.handle.net/1721.1/91592 https://orcid.org/0000-0003-0325-5204 |
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