Pressure variation of Rashba spin splitting toward topological transition in the polar semiconductor BiTeI

Pressure variation of Rashba spin splitting toward topological transition in the polar semiconductor BiTeI

BiTeI is a polar semiconductor with gigantic Rashba spin-split bands in bulk. We have investigated the effect of pressure on the electronic structure of this material via magnetotransport. Periods of Shubunikov–de Haas (SdH) oscillations originating from the spin-split outer Fermi surface and inner...

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Bibliographic Details
Main Authors: Ideue, T., Bahramy, M. S., Murakawa, H., Kaneko, Y., Nagaosa, N., Tokura, Y., Checkelsky, Joseph George
Other Authors: Massachusetts Institute of Technology. Department of Physics
Format: Article
Language:English
Published: American Physical Society 2014
Online Access:http://hdl.handle.net/1721.1/91592
https://orcid.org/0000-0003-0325-5204

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