Modeling 0.18[m̳u̳]m BiCMOS (S18) high sheet resistance (RPH) polysilicon resistor lifetime drift
Thesis: M. Eng., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2014.
Main Author: | Mandal, Anartya |
---|---|
Other Authors: | Jesus del Alamo and Craig Easson. |
Format: | Thesis |
Language: | eng |
Published: |
Massachusetts Institute of Technology
2014
|
Subjects: | |
Online Access: | http://hdl.handle.net/1721.1/91696 |
Similar Items
-
Design of Differential Variable-Gain Transimpedance Amplifier in 0.18 µm SiGe BiCMOS
by: Samuel B.S. Lee, et al.
Published: (2020-06-01) -
A low power millimetre-wave VCO in 0.18 µm SiGe BiCMOS technology
by: Ye, Wanxin, et al.
Published: (2013) -
A Flexible 0.18 <formula formulatype="inline"><tex Notation="TeX">$\mu{\rm m}$</tex> </formula> BiCMOS Technology Suitable for Various Applications
by: Takashi Hashimoto, et al.
Published: (2013-01-01) -
A 5GS/s 8-bit ADC with Self-Calibration in 0.18 μm SiGe BiCMOS Technology
by: Dong Wang, et al.
Published: (2019-02-01) -
A laser source driver in 0.18 μm SiGe BiCMOS technology for high speed quantum key distribution
by: Yulong Zhu, et al.
Published: (2022-12-01)