Controlling Epitaxial GaAs[subscript x]P[subscript 1-x]/Si[subscript 1-y]Ge[subscript y] Heterovalent Interfaces
High quality epitaxial growth of GaAsP on SiGe templates would allow access to materials and band gaps that would enable novel, high performance devices on Si. However, GaAsP/SiGe interface engineering has proved to be very complex. In this paper, we explore the effects of strain at the heterovalent...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
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Electrochemical Society
2014
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| Online Access: | http://hdl.handle.net/1721.1/91920 https://orcid.org/0000-0002-1891-1959 |
| _version_ | 1811085348463181824 |
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| author | Sharma, Prithu Milakovich, Timothy J. Bulsara, Mayank Fitzgerald, Eugene A. |
| author2 | MIT Materials Research Laboratory |
| author_facet | MIT Materials Research Laboratory Sharma, Prithu Milakovich, Timothy J. Bulsara, Mayank Fitzgerald, Eugene A. |
| author_sort | Sharma, Prithu |
| collection | MIT |
| description | High quality epitaxial growth of GaAsP on SiGe templates would allow access to materials and band gaps that would enable novel, high performance devices on Si. However, GaAsP/SiGe interface engineering has proved to be very complex. In this paper, we explore the effects of strain at the heterovalent interface between GaAsP and SiGe alloys on the overall defect morphology. |
| first_indexed | 2024-09-23T13:08:12Z |
| format | Article |
| id | mit-1721.1/91920 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T13:08:12Z |
| publishDate | 2014 |
| publisher | Electrochemical Society |
| record_format | dspace |
| spelling | mit-1721.1/919202022-10-01T13:13:02Z Controlling Epitaxial GaAs[subscript x]P[subscript 1-x]/Si[subscript 1-y]Ge[subscript y] Heterovalent Interfaces Sharma, Prithu Milakovich, Timothy J. Bulsara, Mayank Fitzgerald, Eugene A. MIT Materials Research Laboratory Massachusetts Institute of Technology. Department of Materials Science and Engineering Sharma, Prithu Milakovich, Timothy J. Bulsara, Mayank Fitzgerald, Eugene A. High quality epitaxial growth of GaAsP on SiGe templates would allow access to materials and band gaps that would enable novel, high performance devices on Si. However, GaAsP/SiGe interface engineering has proved to be very complex. In this paper, we explore the effects of strain at the heterovalent interface between GaAsP and SiGe alloys on the overall defect morphology. United States. Army Research Office (Grant W911NF-09-1-0222) 2014-11-26T15:18:10Z 2014-11-26T15:18:10Z 2013-03 2012-10 Article http://purl.org/eprint/type/JournalArticle 1938-6737 1938-5862 http://hdl.handle.net/1721.1/91920 Sharma, P., T. Milakovich, M. T. Bulsara, and E. A. Fitzgerald. “Controlling Epitaxial GaAsxP1-x/Si1-yGey Heterovalent Interfaces.” ECS Transactions 50, no. 9 (March 15, 2013): 333–337. © 2012 ECS - The Electrochemical Society https://orcid.org/0000-0002-1891-1959 en_US http://dx.doi.org/10.1149/05009.0333ecst ECS Transactions Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Electrochemical Society MIT web domain |
| spellingShingle | Sharma, Prithu Milakovich, Timothy J. Bulsara, Mayank Fitzgerald, Eugene A. Controlling Epitaxial GaAs[subscript x]P[subscript 1-x]/Si[subscript 1-y]Ge[subscript y] Heterovalent Interfaces |
| title | Controlling Epitaxial GaAs[subscript x]P[subscript 1-x]/Si[subscript 1-y]Ge[subscript y] Heterovalent Interfaces |
| title_full | Controlling Epitaxial GaAs[subscript x]P[subscript 1-x]/Si[subscript 1-y]Ge[subscript y] Heterovalent Interfaces |
| title_fullStr | Controlling Epitaxial GaAs[subscript x]P[subscript 1-x]/Si[subscript 1-y]Ge[subscript y] Heterovalent Interfaces |
| title_full_unstemmed | Controlling Epitaxial GaAs[subscript x]P[subscript 1-x]/Si[subscript 1-y]Ge[subscript y] Heterovalent Interfaces |
| title_short | Controlling Epitaxial GaAs[subscript x]P[subscript 1-x]/Si[subscript 1-y]Ge[subscript y] Heterovalent Interfaces |
| title_sort | controlling epitaxial gaas subscript x p subscript 1 x si subscript 1 y ge subscript y heterovalent interfaces |
| url | http://hdl.handle.net/1721.1/91920 https://orcid.org/0000-0002-1891-1959 |
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