Controlling Epitaxial GaAs[subscript x]P[subscript 1-x]/Si[subscript 1-y]Ge[subscript y] Heterovalent Interfaces

Controlling Epitaxial GaAs[subscript x]P[subscript 1-x]/Si[subscript 1-y]Ge[subscript y] Heterovalent Interfaces

High quality epitaxial growth of GaAsP on SiGe templates would allow access to materials and band gaps that would enable novel, high performance devices on Si. However, GaAsP/SiGe interface engineering has proved to be very complex. In this paper, we explore the effects of strain at the heterovalent...

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Bibliographic Details
Main Authors:	Sharma, Prithu, Milakovich, Timothy J., Bulsara, Mayank, Fitzgerald, Eugene A.
Other Authors:	MIT Materials Research Laboratory
Format:	Article
Language:	en_US
Published:	Electrochemical Society 2014
Online Access:	http://hdl.handle.net/1721.1/91920 https://orcid.org/0000-0002-1891-1959

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