Fabrication of graphene-on-GaN vertical transistors
Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2014.
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| Format: | Thesis |
| Language: | eng |
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Massachusetts Institute of Technology
2015
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| Online Access: | http://hdl.handle.net/1721.1/93064 |
| _version_ | 1811090637960773632 |
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| author | Zubair, Ahmad, Ph.D. Massachusetts Institute of Technology |
| author2 | Tomás Palacios and Mildred S. Dresselhaus. |
| author_facet | Tomás Palacios and Mildred S. Dresselhaus. Zubair, Ahmad, Ph.D. Massachusetts Institute of Technology |
| author_sort | Zubair, Ahmad, Ph.D. Massachusetts Institute of Technology |
| collection | MIT |
| description | Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2014. |
| first_indexed | 2024-09-23T14:49:29Z |
| format | Thesis |
| id | mit-1721.1/93064 |
| institution | Massachusetts Institute of Technology |
| language | eng |
| last_indexed | 2024-09-23T14:49:29Z |
| publishDate | 2015 |
| publisher | Massachusetts Institute of Technology |
| record_format | dspace |
| spelling | mit-1721.1/930642020-03-31T17:57:18Z Fabrication of graphene-on-GaN vertical transistors Zubair, Ahmad, Ph.D. Massachusetts Institute of Technology Tomás Palacios and Mildred S. Dresselhaus. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Electrical Engineering and Computer Science. Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2014. Bibliographical references 35-37 missing from the bibliography. Cataloged from PDF version of thesis. Includes bibliographical references (pages 61-[64]). The excellent transport properties of graphene make it an excellent option for very high frequency electronics. However, the poor output resistance and difficult lithography of lateral transistors significantly limit its performance. In this thesis, we propose a new kind of vertical graphene base transistor to take advantage of both wide bandgap GaN semiconductors and zero bandgap graphene for high frequency transistors. This majority-carrier device has a metal collector, a graphene base and an AlGaN/GaN emitter. The first device prototype exhibits very promising current density(~mA/cm 2 ) and current gain ([alpha] ~ 50 %). Simulations further support that with proper optimization of the materials and device structure, the proposed transistor can be a promising candidate for future high frequency applications. by Ahmad Zubair. S.M. 2015-01-20T17:59:19Z 2015-01-20T17:59:19Z 2014 2014 Thesis http://hdl.handle.net/1721.1/93064 899998881 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 63, [9] pages application/pdf Massachusetts Institute of Technology |
| spellingShingle | Electrical Engineering and Computer Science. Zubair, Ahmad, Ph.D. Massachusetts Institute of Technology Fabrication of graphene-on-GaN vertical transistors |
| title | Fabrication of graphene-on-GaN vertical transistors |
| title_full | Fabrication of graphene-on-GaN vertical transistors |
| title_fullStr | Fabrication of graphene-on-GaN vertical transistors |
| title_full_unstemmed | Fabrication of graphene-on-GaN vertical transistors |
| title_short | Fabrication of graphene-on-GaN vertical transistors |
| title_sort | fabrication of graphene on gan vertical transistors |
| topic | Electrical Engineering and Computer Science. |
| url | http://hdl.handle.net/1721.1/93064 |
| work_keys_str_mv | AT zubairahmadphdmassachusettsinstituteoftechnology fabricationofgrapheneonganverticaltransistors |