High-speed modulation of resonant CMOS photonic modulators in deep-submicron CMOS

Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2014.

Bibliographic Details
Main Author: Moss, Benjamin (Benjamin Roy)
Other Authors: Vladimir Stojanović.
Format: Thesis
Language:eng
Published: Massachusetts Institute of Technology 2015
Subjects:
Online Access:http://hdl.handle.net/1721.1/93823
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author Moss, Benjamin (Benjamin Roy)
author2 Vladimir Stojanović.
author_facet Vladimir Stojanović.
Moss, Benjamin (Benjamin Roy)
author_sort Moss, Benjamin (Benjamin Roy)
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description Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2014.
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spelling mit-1721.1/938232019-04-12T14:46:35Z High-speed modulation of resonant CMOS photonic modulators in deep-submicron CMOS Moss, Benjamin (Benjamin Roy) Vladimir Stojanović. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science. Electrical Engineering and Computer Science. Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2014. Cataloged from PDF version of thesis. Includes bibliographical references (pages 161-164). Processor manufacturers have turned to parallelism to continue to improve processor performance, and the bandwidth demands of manycore systems are rising. Silicon photonics can lower the energy-per-bit of core-to-core and core-to-memory interconnects while simultaneously alleviating bandwidth bottlenecks. In this work, methods of controlling the amount of charge entering the diode structure of a photonic modulator are investigated to achieve high energy efficiency in a constrained monolithic process. Two digital modulator topologies are simulated, fabricated and tested. One circuit topology, intended to drive a carrier-injection-based ring modulator, uses a digital push-pull topology with preemphasis to reduce the energy-per-bit and to prevent the ring's optical passband from shifting to the next optical channel. The second circuit topology drives a depletion-mode modulator device for high energy efficiency and speed. High-level system modeling is addressed, as well as practical considerations such as packaging. This work marks the first monolithic transceiver in a zero-change CMOS process, and the most energy-efficient monolithically-integrated modulator in a sub-100 nm CMOS process. by Benjamin Moss. Ph. D. 2015-02-05T18:25:32Z 2015-02-05T18:25:32Z 2014 2014 Thesis http://hdl.handle.net/1721.1/93823 900638523 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 164 pages application/pdf Massachusetts Institute of Technology
spellingShingle Electrical Engineering and Computer Science.
Moss, Benjamin (Benjamin Roy)
High-speed modulation of resonant CMOS photonic modulators in deep-submicron CMOS
title High-speed modulation of resonant CMOS photonic modulators in deep-submicron CMOS
title_full High-speed modulation of resonant CMOS photonic modulators in deep-submicron CMOS
title_fullStr High-speed modulation of resonant CMOS photonic modulators in deep-submicron CMOS
title_full_unstemmed High-speed modulation of resonant CMOS photonic modulators in deep-submicron CMOS
title_short High-speed modulation of resonant CMOS photonic modulators in deep-submicron CMOS
title_sort high speed modulation of resonant cmos photonic modulators in deep submicron cmos
topic Electrical Engineering and Computer Science.
url http://hdl.handle.net/1721.1/93823
work_keys_str_mv AT mossbenjaminbenjaminroy highspeedmodulationofresonantcmosphotonicmodulatorsindeepsubmicroncmos