Resonant body transistors in standard CMOS technology
This work presents Si-based electromechanical resonators fabricated at the transistor level of a standard SOI CMOS technology and realized without the need for any postprocessing or packaging. These so-called Resonant Body Transistors (RBTs) are driven capacitively and sensed by piezoresistively mod...
Главные авторы: | Marathe, Radhika A., Wang, Wentao, Mahmood, Zohaib, Daniel, Luca, Weinstein, Dana |
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Другие авторы: | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
Формат: | Статья |
Язык: | en_US |
Опубликовано: |
Institute of Electrical and Electronics Engineers (IEEE)
2015
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Online-ссылка: | http://hdl.handle.net/1721.1/93887 https://orcid.org/0000-0002-5880-3151 |
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