The Kondo effect in a single-electron transistor
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Physics, 1999.
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| Định dạng: | Luận văn |
| Ngôn ngữ: | eng |
| Được phát hành: |
Massachusetts Institute of Technology
2005
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| Những chủ đề: | |
| Truy cập trực tuyến: | http://hdl.handle.net/1721.1/9450 |
| _version_ | 1826209707751112704 |
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| author | Goldhaber-Gordon, David Joshua, 1972- |
| author2 | Marc A. Kastner. |
| author_facet | Marc A. Kastner. Goldhaber-Gordon, David Joshua, 1972- |
| author_sort | Goldhaber-Gordon, David Joshua, 1972- |
| collection | MIT |
| description | Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Physics, 1999. |
| first_indexed | 2024-09-23T14:27:34Z |
| format | Thesis |
| id | mit-1721.1/9450 |
| institution | Massachusetts Institute of Technology |
| language | eng |
| last_indexed | 2024-09-23T14:27:34Z |
| publishDate | 2005 |
| publisher | Massachusetts Institute of Technology |
| record_format | dspace |
| spelling | mit-1721.1/94502019-09-19T22:21:48Z The Kondo effect in a single-electron transistor Goldhaber-Gordon, David Joshua, 1972- Marc A. Kastner. Massachusetts Institute of Technology. Department of Physics Physics Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Physics, 1999. Title as it appears in MIT commencement exercises program, June 1999, has the added subtitle: Strong coupling and many body effects. Includes bibliographical references (p. 115-124). The Kondo effect, which occurs when a metal with magnetic impurities is cooled to low temperatures, has been a focus of research in solid-state physics for several decades. I have designed, fabricated, and measured a system which behaves as a single "artificial" impurity in a metal, displaying the Kondo effect. This so-called Single-Electron Transistor (SET) has several advantages over the classic bulk Kondo systems. Most obviously, only one impurity is involved, so there is no need to worry about interactions between impurities, or different impurities feeling different environments. But even more importantly all the parameters of the system, such as the binding energy of electrons on the impurity and the tunneling rate between metal and impurity, can be tuned in-situ, allowing detailed quantitative comparison to thirty years of theoretical developments whose details could not be tested in previously-studied Kondo systems. by David Joshua Goldhaber-Gordon. Ph.D. 2005-08-22T18:27:32Z 2005-08-22T18:27:32Z 1999 1999 Thesis http://hdl.handle.net/1721.1/9450 43433678 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 124 p. 10544346 bytes 10544102 bytes application/pdf application/pdf application/pdf Massachusetts Institute of Technology |
| spellingShingle | Physics Goldhaber-Gordon, David Joshua, 1972- The Kondo effect in a single-electron transistor |
| title | The Kondo effect in a single-electron transistor |
| title_full | The Kondo effect in a single-electron transistor |
| title_fullStr | The Kondo effect in a single-electron transistor |
| title_full_unstemmed | The Kondo effect in a single-electron transistor |
| title_short | The Kondo effect in a single-electron transistor |
| title_sort | kondo effect in a single electron transistor |
| topic | Physics |
| url | http://hdl.handle.net/1721.1/9450 |
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