X-ray response of silicon surface barrier diodes at 8 and 17.5 keV: evidence that the x-ray sensitive depth is not generally the depletion depth
Main Authors: | , |
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Published: |
MIT Plasma Science and Fusion Center
2015
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Online Access: | http://hdl.handle.net/1721.1/94978 |
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author | Wenzel, K.W. Petrasso, R.D. |
author_facet | Wenzel, K.W. Petrasso, R.D. |
author_sort | Wenzel, K.W. |
collection | MIT |
first_indexed | 2024-09-23T15:40:01Z |
id | mit-1721.1/94978 |
institution | Massachusetts Institute of Technology |
last_indexed | 2024-09-23T15:40:01Z |
publishDate | 2015 |
publisher | MIT Plasma Science and Fusion Center |
record_format | dspace |
spelling | mit-1721.1/949782019-04-10T17:36:38Z X-ray response of silicon surface barrier diodes at 8 and 17.5 keV: evidence that the x-ray sensitive depth is not generally the depletion depth Wenzel, K.W. Petrasso, R.D. 2015-02-19T19:29:23Z 2015-02-19T19:29:23Z 1988-01-01 88ja003 http://hdl.handle.net/1721.1/94978 application/pdf MIT Plasma Science and Fusion Center |
spellingShingle | Wenzel, K.W. Petrasso, R.D. X-ray response of silicon surface barrier diodes at 8 and 17.5 keV: evidence that the x-ray sensitive depth is not generally the depletion depth |
title | X-ray response of silicon surface barrier diodes at 8 and 17.5 keV: evidence that the x-ray sensitive depth is not generally the depletion depth |
title_full | X-ray response of silicon surface barrier diodes at 8 and 17.5 keV: evidence that the x-ray sensitive depth is not generally the depletion depth |
title_fullStr | X-ray response of silicon surface barrier diodes at 8 and 17.5 keV: evidence that the x-ray sensitive depth is not generally the depletion depth |
title_full_unstemmed | X-ray response of silicon surface barrier diodes at 8 and 17.5 keV: evidence that the x-ray sensitive depth is not generally the depletion depth |
title_short | X-ray response of silicon surface barrier diodes at 8 and 17.5 keV: evidence that the x-ray sensitive depth is not generally the depletion depth |
title_sort | x ray response of silicon surface barrier diodes at 8 and 17 5 kev evidence that the x ray sensitive depth is not generally the depletion depth |
url | http://hdl.handle.net/1721.1/94978 |
work_keys_str_mv | AT wenzelkw xrayresponseofsiliconsurfacebarrierdiodesat8and175kevevidencethatthexraysensitivedepthisnotgenerallythedepletiondepth AT petrassord xrayresponseofsiliconsurfacebarrierdiodesat8and175kevevidencethatthexraysensitivedepthisnotgenerallythedepletiondepth |