X-ray response of silicon surface barrier diodes at 8 and 17.5 keV: evidence that the x-ray sensitive depth is not generally the depletion depth

X-ray response of silicon surface barrier diodes at 8 and 17.5 keV: evidence that the x-ray sensitive depth is not generally the depletion depth

Bibliographic Details
Main Authors: Wenzel, K.W., Petrasso, R.D.
Published: MIT Plasma Science and Fusion Center 2015
Online Access:http://hdl.handle.net/1721.1/94978

Internet

http://hdl.handle.net/1721.1/94978

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