90.6% efficient 11MHz 22W LED driver using GaN FETs and burst-mode controller with 0.96 power factor

With the advent of reliable, high brightness and high efficacy LEDs, the lighting industry is expected to see a significant growth in the near future. However, for LEDs to completely replace the traditional incandescent and CFL bulbs, the power converters within the LED drivers need to be miniaturiz...

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Main Authors: Chandrakasan, Anantha P., Bandyopadhyay, Saurav, Neidorff, Bob, Freeman, Dave
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers (IEEE) 2015
Online Access:http://hdl.handle.net/1721.1/95919
https://orcid.org/0000-0002-5977-2748
https://orcid.org/0000-0002-1242-6768
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author Chandrakasan, Anantha P.
Bandyopadhyay, Saurav
Neidorff, Bob
Freeman, Dave
author2 Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
author_facet Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Chandrakasan, Anantha P.
Bandyopadhyay, Saurav
Neidorff, Bob
Freeman, Dave
author_sort Chandrakasan, Anantha P.
collection MIT
description With the advent of reliable, high brightness and high efficacy LEDs, the lighting industry is expected to see a significant growth in the near future. However, for LEDs to completely replace the traditional incandescent and CFL bulbs, the power converters within the LED drivers need to be miniaturized. Superior figure of merit (R[subscript ds,ON]xQ[subscript g]) of Gallium Nitride (GaN) FETs over Silicon FETs [1] can enable both high efficiency and high frequency operation, thereby making power converters smaller, more efficient and reliable. By using integrated controllers and drivers, the number of components on the driver PCB can be reduced, further miniaturizing the driver. This work focuses on demonstrating a small form factor, high efficiency offline LED driver using GaN FETs with an integrated gate driver and controller circuit implemented on a 0.35μm CMOS process with [3.3V over 15V] voltage handling capability.
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spelling mit-1721.1/959192022-09-30T16:31:14Z 90.6% efficient 11MHz 22W LED driver using GaN FETs and burst-mode controller with 0.96 power factor Chandrakasan, Anantha P. Bandyopadhyay, Saurav Neidorff, Bob Freeman, Dave Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Chandrakasan, Anantha P. Bandyopadhyay, Saurav Neidorff, Bob Freeman, Dave Chandrakasan, Anantha P. With the advent of reliable, high brightness and high efficacy LEDs, the lighting industry is expected to see a significant growth in the near future. However, for LEDs to completely replace the traditional incandescent and CFL bulbs, the power converters within the LED drivers need to be miniaturized. Superior figure of merit (R[subscript ds,ON]xQ[subscript g]) of Gallium Nitride (GaN) FETs over Silicon FETs [1] can enable both high efficiency and high frequency operation, thereby making power converters smaller, more efficient and reliable. By using integrated controllers and drivers, the number of components on the driver PCB can be reduced, further miniaturizing the driver. This work focuses on demonstrating a small form factor, high efficiency offline LED driver using GaN FETs with an integrated gate driver and controller circuit implemented on a 0.35μm CMOS process with [3.3V over 15V] voltage handling capability. MIT Energy Initiative 2015-03-10T14:34:47Z 2015-03-10T14:34:47Z 2013-02 Article http://purl.org/eprint/type/ConferencePaper 978-1-4673-4516-3 978-1-4673-4515-6 978-1-4673-4514-9 0193-6530 http://hdl.handle.net/1721.1/95919 Bandyopadhyay, S., B. Neidorff, D. Freeman, and A. P. Chandrakasan. “90.6% Efficient 11MHz 22W LED Driver Using GaN FETs and Burst-Mode Controller with 0.96 Power Factor.” 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers (February 2013). https://orcid.org/0000-0002-5977-2748 https://orcid.org/0000-0002-1242-6768 en_US http://dx.doi.org/10.1109/ISSCC.2013.6487773 Proceedings of the IEEE International Solid-State Circuits Conference - Digest of Technical Papers, 2013 Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/ application/pdf Institute of Electrical and Electronics Engineers (IEEE) Chandrakasan
spellingShingle Chandrakasan, Anantha P.
Bandyopadhyay, Saurav
Neidorff, Bob
Freeman, Dave
90.6% efficient 11MHz 22W LED driver using GaN FETs and burst-mode controller with 0.96 power factor
title 90.6% efficient 11MHz 22W LED driver using GaN FETs and burst-mode controller with 0.96 power factor
title_full 90.6% efficient 11MHz 22W LED driver using GaN FETs and burst-mode controller with 0.96 power factor
title_fullStr 90.6% efficient 11MHz 22W LED driver using GaN FETs and burst-mode controller with 0.96 power factor
title_full_unstemmed 90.6% efficient 11MHz 22W LED driver using GaN FETs and burst-mode controller with 0.96 power factor
title_short 90.6% efficient 11MHz 22W LED driver using GaN FETs and burst-mode controller with 0.96 power factor
title_sort 90 6 efficient 11mhz 22w led driver using gan fets and burst mode controller with 0 96 power factor
url http://hdl.handle.net/1721.1/95919
https://orcid.org/0000-0002-5977-2748
https://orcid.org/0000-0002-1242-6768
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