90.6% efficient 11MHz 22W LED driver using GaN FETs and burst-mode controller with 0.96 power factor
With the advent of reliable, high brightness and high efficacy LEDs, the lighting industry is expected to see a significant growth in the near future. However, for LEDs to completely replace the traditional incandescent and CFL bulbs, the power converters within the LED drivers need to be miniaturiz...
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Institute of Electrical and Electronics Engineers (IEEE)
2015
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Online Access: | http://hdl.handle.net/1721.1/95919 https://orcid.org/0000-0002-5977-2748 https://orcid.org/0000-0002-1242-6768 |
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author | Chandrakasan, Anantha P. Bandyopadhyay, Saurav Neidorff, Bob Freeman, Dave |
author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Chandrakasan, Anantha P. Bandyopadhyay, Saurav Neidorff, Bob Freeman, Dave |
author_sort | Chandrakasan, Anantha P. |
collection | MIT |
description | With the advent of reliable, high brightness and high efficacy LEDs, the lighting industry is expected to see a significant growth in the near future. However, for LEDs to completely replace the traditional incandescent and CFL bulbs, the power converters within the LED drivers need to be miniaturized. Superior figure of merit (R[subscript ds,ON]xQ[subscript g]) of Gallium Nitride (GaN) FETs over Silicon FETs [1] can enable both high efficiency and high frequency operation, thereby making power converters smaller, more efficient and reliable. By using integrated controllers and drivers, the number of components on the driver PCB can be reduced, further miniaturizing the driver. This work focuses on demonstrating a small form factor, high efficiency offline LED driver using GaN FETs with an integrated gate driver and controller circuit implemented on a 0.35μm CMOS process with [3.3V over 15V] voltage handling capability. |
first_indexed | 2024-09-23T09:44:15Z |
format | Article |
id | mit-1721.1/95919 |
institution | Massachusetts Institute of Technology |
language | en_US |
last_indexed | 2024-09-23T09:44:15Z |
publishDate | 2015 |
publisher | Institute of Electrical and Electronics Engineers (IEEE) |
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spelling | mit-1721.1/959192022-09-30T16:31:14Z 90.6% efficient 11MHz 22W LED driver using GaN FETs and burst-mode controller with 0.96 power factor Chandrakasan, Anantha P. Bandyopadhyay, Saurav Neidorff, Bob Freeman, Dave Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Chandrakasan, Anantha P. Bandyopadhyay, Saurav Neidorff, Bob Freeman, Dave Chandrakasan, Anantha P. With the advent of reliable, high brightness and high efficacy LEDs, the lighting industry is expected to see a significant growth in the near future. However, for LEDs to completely replace the traditional incandescent and CFL bulbs, the power converters within the LED drivers need to be miniaturized. Superior figure of merit (R[subscript ds,ON]xQ[subscript g]) of Gallium Nitride (GaN) FETs over Silicon FETs [1] can enable both high efficiency and high frequency operation, thereby making power converters smaller, more efficient and reliable. By using integrated controllers and drivers, the number of components on the driver PCB can be reduced, further miniaturizing the driver. This work focuses on demonstrating a small form factor, high efficiency offline LED driver using GaN FETs with an integrated gate driver and controller circuit implemented on a 0.35μm CMOS process with [3.3V over 15V] voltage handling capability. MIT Energy Initiative 2015-03-10T14:34:47Z 2015-03-10T14:34:47Z 2013-02 Article http://purl.org/eprint/type/ConferencePaper 978-1-4673-4516-3 978-1-4673-4515-6 978-1-4673-4514-9 0193-6530 http://hdl.handle.net/1721.1/95919 Bandyopadhyay, S., B. Neidorff, D. Freeman, and A. P. Chandrakasan. “90.6% Efficient 11MHz 22W LED Driver Using GaN FETs and Burst-Mode Controller with 0.96 Power Factor.” 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers (February 2013). https://orcid.org/0000-0002-5977-2748 https://orcid.org/0000-0002-1242-6768 en_US http://dx.doi.org/10.1109/ISSCC.2013.6487773 Proceedings of the IEEE International Solid-State Circuits Conference - Digest of Technical Papers, 2013 Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/ application/pdf Institute of Electrical and Electronics Engineers (IEEE) Chandrakasan |
spellingShingle | Chandrakasan, Anantha P. Bandyopadhyay, Saurav Neidorff, Bob Freeman, Dave 90.6% efficient 11MHz 22W LED driver using GaN FETs and burst-mode controller with 0.96 power factor |
title | 90.6% efficient 11MHz 22W LED driver using GaN FETs and burst-mode controller with 0.96 power factor |
title_full | 90.6% efficient 11MHz 22W LED driver using GaN FETs and burst-mode controller with 0.96 power factor |
title_fullStr | 90.6% efficient 11MHz 22W LED driver using GaN FETs and burst-mode controller with 0.96 power factor |
title_full_unstemmed | 90.6% efficient 11MHz 22W LED driver using GaN FETs and burst-mode controller with 0.96 power factor |
title_short | 90.6% efficient 11MHz 22W LED driver using GaN FETs and burst-mode controller with 0.96 power factor |
title_sort | 90 6 efficient 11mhz 22w led driver using gan fets and burst mode controller with 0 96 power factor |
url | http://hdl.handle.net/1721.1/95919 https://orcid.org/0000-0002-5977-2748 https://orcid.org/0000-0002-1242-6768 |
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