Surface Chemistry and Non-Stoichiometry of Nd2NiO4+  Epitaxial Thin Films with Different Orientation and Strain

The influence of lattice strain on non-stoichiometry and surface chemical composition was investigated for epitaxial Nd2NiO4+ä (NNO) films during annealing in ultra high vacuum (below 10[superscript -8] mbar) and temperatures of up to 700oC. (100)- and (001)-oriented films with tensile and compressi...

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Main Authors: Tsvetkov, Nikolai, Lu, Qiyang, Chen, Yan, Yildiz, Bilge
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:en_US
Published: Electrochemical Society 2015
Online Access:http://hdl.handle.net/1721.1/96014
https://orcid.org/0000-0002-2688-5666
https://orcid.org/0000-0001-6063-023X
https://orcid.org/0000-0003-4690-5334
https://orcid.org/0000-0002-9155-3684
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author Tsvetkov, Nikolai
Lu, Qiyang
Chen, Yan
Yildiz, Bilge
author2 Massachusetts Institute of Technology. Department of Materials Science and Engineering
author_facet Massachusetts Institute of Technology. Department of Materials Science and Engineering
Tsvetkov, Nikolai
Lu, Qiyang
Chen, Yan
Yildiz, Bilge
author_sort Tsvetkov, Nikolai
collection MIT
description The influence of lattice strain on non-stoichiometry and surface chemical composition was investigated for epitaxial Nd2NiO4+ä (NNO) films during annealing in ultra high vacuum (below 10[superscript -8] mbar) and temperatures of up to 700oC. (100)- and (001)-oriented films with tensile and compressive lattice strain along c-axis were fabricated using pulsed laser deposition method. A significant decrease in the c-lattice parameter during annealing was found by x-ray diffraction (XRD) for the tensile strained films. X-ray photoelectron spectroscopy (XPS) showed that Ni reduction during annealing takes place only in compressively strained films, indicating the lower content of oxygen interstitials. A lower interstitial content in the compressively strained NNO films is consistent with the smaller c-lattice parameter measured by XRD and the easier reducibility of Ni measured by XPS. Cation segregation and morphological changes were found only for the compressively strained film surfaces. These results show that lattice strain along the c-axis is an important parameter that can alter the surface chemistry, and thus the oxygen exchange kinetics, on Nd2NiO4+ä at elevated temperatures.
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spelling mit-1721.1/960142022-10-01T14:33:15Z Surface Chemistry and Non-Stoichiometry of Nd2NiO4+  Epitaxial Thin Films with Different Orientation and Strain Tsvetkov, Nikolai Lu, Qiyang Chen, Yan Yildiz, Bilge Massachusetts Institute of Technology. Department of Materials Science and Engineering Massachusetts Institute of Technology. Department of Nuclear Science and Engineering Massachusetts Institute of Technology. Laboratory for Electrochemical Interfaces Tsvetkov, Nikolai Lu, Qiyang Chen, Yan Yildiz, Bilge The influence of lattice strain on non-stoichiometry and surface chemical composition was investigated for epitaxial Nd2NiO4+ä (NNO) films during annealing in ultra high vacuum (below 10[superscript -8] mbar) and temperatures of up to 700oC. (100)- and (001)-oriented films with tensile and compressive lattice strain along c-axis were fabricated using pulsed laser deposition method. A significant decrease in the c-lattice parameter during annealing was found by x-ray diffraction (XRD) for the tensile strained films. X-ray photoelectron spectroscopy (XPS) showed that Ni reduction during annealing takes place only in compressively strained films, indicating the lower content of oxygen interstitials. A lower interstitial content in the compressively strained NNO films is consistent with the smaller c-lattice parameter measured by XRD and the easier reducibility of Ni measured by XPS. Cation segregation and morphological changes were found only for the compressively strained film surfaces. These results show that lattice strain along the c-axis is an important parameter that can alter the surface chemistry, and thus the oxygen exchange kinetics, on Nd2NiO4+ä at elevated temperatures. National Science Foundation (U.S.) (Division of Materials Research, Ceramics Program, CAREER award) 2015-03-13T16:02:24Z 2015-03-13T16:02:24Z 2013-10 Article http://purl.org/eprint/type/JournalArticle 1938-6737 1938-5862 http://hdl.handle.net/1721.1/96014 Tsvetkov, N., Q. Lu, Y. Chen, and B. Yildiz. “Surface Chemistry and Non-Stoichiometry of Nd2NiO4+  Epitaxial Thin Films with Different Orientation and Strain.” ECS Transactions 57, no. 1 (October 6, 2013): 1743–1752. © 2013 Electrochemical Society. https://orcid.org/0000-0002-2688-5666 https://orcid.org/0000-0001-6063-023X https://orcid.org/0000-0003-4690-5334 https://orcid.org/0000-0002-9155-3684 en_US http://dx.doi.org/10.1149/05701.1743ecst ECS Transactions Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Electrochemical Society MIT web domain
spellingShingle Tsvetkov, Nikolai
Lu, Qiyang
Chen, Yan
Yildiz, Bilge
Surface Chemistry and Non-Stoichiometry of Nd2NiO4+  Epitaxial Thin Films with Different Orientation and Strain
title Surface Chemistry and Non-Stoichiometry of Nd2NiO4+  Epitaxial Thin Films with Different Orientation and Strain
title_full Surface Chemistry and Non-Stoichiometry of Nd2NiO4+  Epitaxial Thin Films with Different Orientation and Strain
title_fullStr Surface Chemistry and Non-Stoichiometry of Nd2NiO4+  Epitaxial Thin Films with Different Orientation and Strain
title_full_unstemmed Surface Chemistry and Non-Stoichiometry of Nd2NiO4+  Epitaxial Thin Films with Different Orientation and Strain
title_short Surface Chemistry and Non-Stoichiometry of Nd2NiO4+  Epitaxial Thin Films with Different Orientation and Strain
title_sort surface chemistry and non stoichiometry of nd2nio4 epitaxial thin films with different orientation and strain
url http://hdl.handle.net/1721.1/96014
https://orcid.org/0000-0002-2688-5666
https://orcid.org/0000-0001-6063-023X
https://orcid.org/0000-0003-4690-5334
https://orcid.org/0000-0002-9155-3684
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