Antiferromagnetic phase of the gapless semiconductor V[subscript 3]Al
Discovering new antiferromagnetic (AF) compounds is at the forefront of developing future spintronic devices without fringing magnetic fields. The AF gapless semiconducting D0[subscript 3] phase of V[subscript 3]Al was successfully synthesized via arc-melting and annealing. The AF properties were es...
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| Format: | Article |
| Language: | English |
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American Physical Society
2015
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| Online Access: | http://hdl.handle.net/1721.1/96151 |
| _version_ | 1811084798331977728 |
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| author | Jamer, Michelle E. Assaf, Badih A. Sterbinsky, G. E. Arena, D. Lewis, L. H. Radtke, G. Heiman, D. Saul, Alberto Andres |
| author2 | Massachusetts Institute of Technology. Department of Civil and Environmental Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Civil and Environmental Engineering Jamer, Michelle E. Assaf, Badih A. Sterbinsky, G. E. Arena, D. Lewis, L. H. Radtke, G. Heiman, D. Saul, Alberto Andres |
| author_sort | Jamer, Michelle E. |
| collection | MIT |
| description | Discovering new antiferromagnetic (AF) compounds is at the forefront of developing future spintronic devices without fringing magnetic fields. The AF gapless semiconducting D0[subscript 3] phase of V[subscript 3]Al was successfully synthesized via arc-melting and annealing. The AF properties were established through synchrotron measurements of the atom-specific magnetic moments, where the magnetic dichroism reveals large and oppositely oriented moments on individual V atoms. Density functional theory calculations confirmed the stability of a type G antiferromagnetism involving only two-thirds of the V atoms, while the remaining V atoms are nonmagnetic. Magnetization, x-ray diffraction, and transport measurements also support the antiferromagnetism. This archetypal gapless semiconductor may be considered as a cornerstone for future spintronic devices containing AF elements. |
| first_indexed | 2024-09-23T12:57:45Z |
| format | Article |
| id | mit-1721.1/96151 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T12:57:45Z |
| publishDate | 2015 |
| publisher | American Physical Society |
| record_format | dspace |
| spelling | mit-1721.1/961512022-09-28T11:09:03Z Antiferromagnetic phase of the gapless semiconductor V[subscript 3]Al Jamer, Michelle E. Assaf, Badih A. Sterbinsky, G. E. Arena, D. Lewis, L. H. Radtke, G. Heiman, D. Saul, Alberto Andres Massachusetts Institute of Technology. Department of Civil and Environmental Engineering Saul, Alberto Andres Discovering new antiferromagnetic (AF) compounds is at the forefront of developing future spintronic devices without fringing magnetic fields. The AF gapless semiconducting D0[subscript 3] phase of V[subscript 3]Al was successfully synthesized via arc-melting and annealing. The AF properties were established through synchrotron measurements of the atom-specific magnetic moments, where the magnetic dichroism reveals large and oppositely oriented moments on individual V atoms. Density functional theory calculations confirmed the stability of a type G antiferromagnetism involving only two-thirds of the V atoms, while the remaining V atoms are nonmagnetic. Magnetization, x-ray diffraction, and transport measurements also support the antiferromagnetism. This archetypal gapless semiconductor may be considered as a cornerstone for future spintronic devices containing AF elements. National Science Foundation (U.S.) (Grant DMR-0907007) National Science Foundation (U.S.) (Grant ECCS-1402738) United States. Dept. of Energy. Office of Basic Energy Sciences (Brookhaven National Laboratory. Contract DE-AC02-98CH10886) 2015-03-24T17:17:51Z 2015-03-24T17:17:51Z 2015-03 2015-02 2015-03-11T22:00:14Z Article http://purl.org/eprint/type/JournalArticle 1098-0121 1550-235X http://hdl.handle.net/1721.1/96151 Jamer, M. E. et al. “Antiferromagnetic Phase of the Gapless Semiconductor V[subscript 3]Al.” Physical Review B 91.9 (March 2015). © 2015 American Physical Society en http://dx.doi.org/10.1103/PhysRevB.91.094409 Physical Review B Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. American Physical Society application/pdf American Physical Society American Physical Society |
| spellingShingle | Jamer, Michelle E. Assaf, Badih A. Sterbinsky, G. E. Arena, D. Lewis, L. H. Radtke, G. Heiman, D. Saul, Alberto Andres Antiferromagnetic phase of the gapless semiconductor V[subscript 3]Al |
| title | Antiferromagnetic phase of the gapless semiconductor V[subscript 3]Al |
| title_full | Antiferromagnetic phase of the gapless semiconductor V[subscript 3]Al |
| title_fullStr | Antiferromagnetic phase of the gapless semiconductor V[subscript 3]Al |
| title_full_unstemmed | Antiferromagnetic phase of the gapless semiconductor V[subscript 3]Al |
| title_short | Antiferromagnetic phase of the gapless semiconductor V[subscript 3]Al |
| title_sort | antiferromagnetic phase of the gapless semiconductor v subscript 3 al |
| url | http://hdl.handle.net/1721.1/96151 |
| work_keys_str_mv | AT jamermichellee antiferromagneticphaseofthegaplesssemiconductorvsubscript3al AT assafbadiha antiferromagneticphaseofthegaplesssemiconductorvsubscript3al AT sterbinskyge antiferromagneticphaseofthegaplesssemiconductorvsubscript3al AT arenad antiferromagneticphaseofthegaplesssemiconductorvsubscript3al AT lewislh antiferromagneticphaseofthegaplesssemiconductorvsubscript3al AT radtkeg antiferromagneticphaseofthegaplesssemiconductorvsubscript3al AT heimand antiferromagneticphaseofthegaplesssemiconductorvsubscript3al AT saulalbertoandres antiferromagneticphaseofthegaplesssemiconductorvsubscript3al |