Antiferromagnetic phase of the gapless semiconductor V[subscript 3]Al

Antiferromagnetic phase of the gapless semiconductor V[subscript 3]Al

Discovering new antiferromagnetic (AF) compounds is at the forefront of developing future spintronic devices without fringing magnetic fields. The AF gapless semiconducting D0[subscript 3] phase of V[subscript 3]Al was successfully synthesized via arc-melting and annealing. The AF properties were es...

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Bibliographic Details
Main Authors: Jamer, Michelle E., Assaf, Badih A., Sterbinsky, G. E., Arena, D., Lewis, L. H., Radtke, G., Heiman, D., Saul, Alberto Andres
Other Authors: Massachusetts Institute of Technology. Department of Civil and Environmental Engineering
Format: Article
Language:English
Published: American Physical Society 2015
Online Access:http://hdl.handle.net/1721.1/96151

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