Double resonance Raman modes in monolayer and few-layer MoTe[subscript 2]
We study the second-order Raman process of mono- and few-layer MoTe[subscript 2], by combining ab initio density functional perturbation calculations with experimental Raman spectroscopy using 532, 633, and 785 nm excitation lasers. The calculated electronic band structure and the density of states...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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American Physical Society
2015
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| Online Access: | http://hdl.handle.net/1721.1/96972 https://orcid.org/0000-0001-8492-2261 https://orcid.org/0000-0001-8749-7408 |
| _version_ | 1826213242520731648 |
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| author | Guo, Huaihong Yang, Teng Yamamoto, Mahito Zhou, Lin Ishikawa, Ryo Ueno, Keiji Tsukagoshi, Kazuhito Zhang, Zhidong Saito, Riichiro Dresselhaus, Mildred |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Guo, Huaihong Yang, Teng Yamamoto, Mahito Zhou, Lin Ishikawa, Ryo Ueno, Keiji Tsukagoshi, Kazuhito Zhang, Zhidong Saito, Riichiro Dresselhaus, Mildred |
| author_sort | Guo, Huaihong |
| collection | MIT |
| description | We study the second-order Raman process of mono- and few-layer MoTe[subscript 2], by combining ab initio density functional perturbation calculations with experimental Raman spectroscopy using 532, 633, and 785 nm excitation lasers. The calculated electronic band structure and the density of states show that the resonance Raman process occurs at the M point in the Brillouin zone, where a strong optical absorption occurs due to a logarithmic Van Hove singularity of the electronic density of states. The double resonance Raman process with intervalley electron-phonon coupling connects two of the three inequivalent M points in the Brillouin zone, giving rise to second-order Raman peaks due to the M-point phonons. The calculated vibrational frequencies of the second-order Raman spectra agree with the observed laser-energy-dependent Raman shifts in the experiment. |
| first_indexed | 2024-09-23T15:45:43Z |
| format | Article |
| id | mit-1721.1/96972 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T15:45:43Z |
| publishDate | 2015 |
| publisher | American Physical Society |
| record_format | dspace |
| spelling | mit-1721.1/969722022-10-02T03:54:32Z Double resonance Raman modes in monolayer and few-layer MoTe[subscript 2] Guo, Huaihong Yang, Teng Yamamoto, Mahito Zhou, Lin Ishikawa, Ryo Ueno, Keiji Tsukagoshi, Kazuhito Zhang, Zhidong Saito, Riichiro Dresselhaus, Mildred Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Department of Physics Massachusetts Institute of Technology. Research Laboratory of Electronics Zhou, Lin Dresselhaus, Mildred We study the second-order Raman process of mono- and few-layer MoTe[subscript 2], by combining ab initio density functional perturbation calculations with experimental Raman spectroscopy using 532, 633, and 785 nm excitation lasers. The calculated electronic band structure and the density of states show that the resonance Raman process occurs at the M point in the Brillouin zone, where a strong optical absorption occurs due to a logarithmic Van Hove singularity of the electronic density of states. The double resonance Raman process with intervalley electron-phonon coupling connects two of the three inequivalent M points in the Brillouin zone, giving rise to second-order Raman peaks due to the M-point phonons. The calculated vibrational frequencies of the second-order Raman spectra agree with the observed laser-energy-dependent Raman shifts in the experiment. National Science Foundation (U.S.). Division of Materials Research (Grant 1004147) 2015-05-13T12:26:16Z 2015-05-13T12:26:16Z 2015-05 2015-03 2015-05-12T22:00:03Z Article http://purl.org/eprint/type/JournalArticle 1098-0121 1550-235X http://hdl.handle.net/1721.1/96972 Guo, Huaihong, Teng Yang, Mahito Yamamoto, Lin Zhou, Ryo Ishikawa, Keiji Ueno, Kazuhito Tsukagoshi, Zhidong Zhang, Mildred S. Dresselhaus, and Riichiro Saito. “Double Resonance Raman Modes in Monolayer and Few-Layer MoTe[subscript 2].” Phys. Rev. B 91, no. 20 (May 2015). © 2015 American Physical Society https://orcid.org/0000-0001-8492-2261 https://orcid.org/0000-0001-8749-7408 en http://dx.doi.org/10.1103/PhysRevB.91.205415 Physical Review B Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. American Physical Society application/pdf American Physical Society American Physical Society |
| spellingShingle | Guo, Huaihong Yang, Teng Yamamoto, Mahito Zhou, Lin Ishikawa, Ryo Ueno, Keiji Tsukagoshi, Kazuhito Zhang, Zhidong Saito, Riichiro Dresselhaus, Mildred Double resonance Raman modes in monolayer and few-layer MoTe[subscript 2] |
| title | Double resonance Raman modes in monolayer and few-layer MoTe[subscript 2] |
| title_full | Double resonance Raman modes in monolayer and few-layer MoTe[subscript 2] |
| title_fullStr | Double resonance Raman modes in monolayer and few-layer MoTe[subscript 2] |
| title_full_unstemmed | Double resonance Raman modes in monolayer and few-layer MoTe[subscript 2] |
| title_short | Double resonance Raman modes in monolayer and few-layer MoTe[subscript 2] |
| title_sort | double resonance raman modes in monolayer and few layer mote subscript 2 |
| url | http://hdl.handle.net/1721.1/96972 https://orcid.org/0000-0001-8492-2261 https://orcid.org/0000-0001-8749-7408 |
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