Double resonance Raman modes in monolayer and few-layer MoTe[subscript 2]

We study the second-order Raman process of mono- and few-layer MoTe[subscript 2], by combining ab initio density functional perturbation calculations with experimental Raman spectroscopy using 532, 633, and 785 nm excitation lasers. The calculated electronic band structure and the density of states...

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Bibliographic Details
Main Authors: Guo, Huaihong, Yang, Teng, Yamamoto, Mahito, Zhou, Lin, Ishikawa, Ryo, Ueno, Keiji, Tsukagoshi, Kazuhito, Zhang, Zhidong, Saito, Riichiro, Dresselhaus, Mildred
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:English
Published: American Physical Society 2015
Online Access:http://hdl.handle.net/1721.1/96972
https://orcid.org/0000-0001-8492-2261
https://orcid.org/0000-0001-8749-7408

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