Supersaturating silicon with transition metals by ion implantation and pulsed laser melting
We investigate the possibility of creating an intermediate band semiconductor by supersaturating Si with a range of transition metals (Au, Co, Cr, Cu, Fe, Pd, Pt, W, and Zn) using ion implantation followed by pulsed laser melting (PLM). Structural characterization shows evidence of either surface se...
| Main Authors: | , , , , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
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American Institute of Physics (AIP)
2015
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| Online Access: | http://hdl.handle.net/1721.1/97221 https://orcid.org/0000-0001-8345-4937 |
| _version_ | 1826215457292550144 |
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| author | Recht, Daniel Smith, Matthew J. Charnvanichborikarn, Supakit Sullivan, Joseph T. Winkler, Mark T. Mathews, Jay Warrender, Jeffrey M. Buonassisi, Tonio Williams, James S. Gradecak, Silvija Aziz, Michael J. |
| author2 | Massachusetts Institute of Technology. Department of Materials Science and Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Materials Science and Engineering Recht, Daniel Smith, Matthew J. Charnvanichborikarn, Supakit Sullivan, Joseph T. Winkler, Mark T. Mathews, Jay Warrender, Jeffrey M. Buonassisi, Tonio Williams, James S. Gradecak, Silvija Aziz, Michael J. |
| author_sort | Recht, Daniel |
| collection | MIT |
| description | We investigate the possibility of creating an intermediate band semiconductor by supersaturating Si with a range of transition metals (Au, Co, Cr, Cu, Fe, Pd, Pt, W, and Zn) using ion implantation followed by pulsed laser melting (PLM). Structural characterization shows evidence of either surface segregation or cellular breakdown in all transition metals investigated, preventing the formation of high supersaturations. However, concentration-depth profiling reveals that regions of Si supersaturated with Au and Zn are formed below the regions of cellular breakdown. Fits to the concentration-depth profile are used to estimate the diffusive speeds, v [subscript D], of Au and Zn, and put lower bounds on v [subscript D] of the other metals ranging from 10[superscript 2] to 10[superscript 4] m/s. Knowledge of v [subscript D] is used to tailor the irradiation conditions and synthesize single-crystal Si supersaturated with 10[superscript 19] Au/cm[superscript 3] without cellular breakdown. Values of v [subscript D] are compared to those for other elements in Si. Two independent thermophysical properties, the solute diffusivity at the melting temperature, D [subscript s](T [subscript m]), and the equilibrium partition coefficient, k [subscript e], are shown to simultaneously affect v [subscript D]. We demonstrate a correlation between v [subscript D] and the ratio D [subscript s](T [subscript m])/k [subscript e] [superscript 0.67], which is exhibited for Group III, IV, and V solutes but not for the transition metals investigated. Nevertheless, comparison with experimental results suggests that D [subscript s](T [subscript m])/k [subscript e] [superscript 0.67] might serve as a metric for evaluating the potential to supersaturate Si with transition metals by PLM. |
| first_indexed | 2024-09-23T16:29:51Z |
| format | Article |
| id | mit-1721.1/97221 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T16:29:51Z |
| publishDate | 2015 |
| publisher | American Institute of Physics (AIP) |
| record_format | dspace |
| spelling | mit-1721.1/972212022-10-02T08:09:53Z Supersaturating silicon with transition metals by ion implantation and pulsed laser melting Recht, Daniel Smith, Matthew J. Charnvanichborikarn, Supakit Sullivan, Joseph T. Winkler, Mark T. Mathews, Jay Warrender, Jeffrey M. Buonassisi, Tonio Williams, James S. Gradecak, Silvija Aziz, Michael J. Massachusetts Institute of Technology. Department of Materials Science and Engineering Massachusetts Institute of Technology. Department of Mechanical Engineering Smith, Matthew J. Sullivan, Joseph T. Winkler, Mark T. Buonassisi, Tonio Gradecak, Silvija We investigate the possibility of creating an intermediate band semiconductor by supersaturating Si with a range of transition metals (Au, Co, Cr, Cu, Fe, Pd, Pt, W, and Zn) using ion implantation followed by pulsed laser melting (PLM). Structural characterization shows evidence of either surface segregation or cellular breakdown in all transition metals investigated, preventing the formation of high supersaturations. However, concentration-depth profiling reveals that regions of Si supersaturated with Au and Zn are formed below the regions of cellular breakdown. Fits to the concentration-depth profile are used to estimate the diffusive speeds, v [subscript D], of Au and Zn, and put lower bounds on v [subscript D] of the other metals ranging from 10[superscript 2] to 10[superscript 4] m/s. Knowledge of v [subscript D] is used to tailor the irradiation conditions and synthesize single-crystal Si supersaturated with 10[superscript 19] Au/cm[superscript 3] without cellular breakdown. Values of v [subscript D] are compared to those for other elements in Si. Two independent thermophysical properties, the solute diffusivity at the melting temperature, D [subscript s](T [subscript m]), and the equilibrium partition coefficient, k [subscript e], are shown to simultaneously affect v [subscript D]. We demonstrate a correlation between v [subscript D] and the ratio D [subscript s](T [subscript m])/k [subscript e] [superscript 0.67], which is exhibited for Group III, IV, and V solutes but not for the transition metals investigated. Nevertheless, comparison with experimental results suggests that D [subscript s](T [subscript m])/k [subscript e] [superscript 0.67] might serve as a metric for evaluating the potential to supersaturate Si with transition metals by PLM. National Science Foundation (U.S.) (Faculty Early Career Development Program ECCS-1150878) Chesonis Family Foundation United States. Army Research Laboratory (United States. Army Research Office Grant W911NF-10-1-0442) National Science Foundation (U.S.) (United States. Dept. of Energy NSF CA EEC-1041895) 2015-06-08T18:00:29Z 2015-06-08T18:00:29Z 2013-09 2013-07 Article http://purl.org/eprint/type/JournalArticle 00218979 1089-7550 http://hdl.handle.net/1721.1/97221 Recht, Daniel, Matthew J. Smith, Supakit Charnvanichborikarn, Joseph T. Sullivan, Mark T. Winkler, Jay Mathews, Jeffrey M. Warrender, et al. “Supersaturating Silicon with Transition Metals by Ion Implantation and Pulsed Laser Melting.” Journal of Applied Physics 114, no. 12 (2013): 124903. © 2013 AIP Publishing LLC https://orcid.org/0000-0001-8345-4937 en_US http://dx.doi.org/10.1063/1.4821240 Journal of Applied Physics Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Institute of Physics (AIP) Other univ. web domain |
| spellingShingle | Recht, Daniel Smith, Matthew J. Charnvanichborikarn, Supakit Sullivan, Joseph T. Winkler, Mark T. Mathews, Jay Warrender, Jeffrey M. Buonassisi, Tonio Williams, James S. Gradecak, Silvija Aziz, Michael J. Supersaturating silicon with transition metals by ion implantation and pulsed laser melting |
| title | Supersaturating silicon with transition metals by ion implantation and pulsed laser melting |
| title_full | Supersaturating silicon with transition metals by ion implantation and pulsed laser melting |
| title_fullStr | Supersaturating silicon with transition metals by ion implantation and pulsed laser melting |
| title_full_unstemmed | Supersaturating silicon with transition metals by ion implantation and pulsed laser melting |
| title_short | Supersaturating silicon with transition metals by ion implantation and pulsed laser melting |
| title_sort | supersaturating silicon with transition metals by ion implantation and pulsed laser melting |
| url | http://hdl.handle.net/1721.1/97221 https://orcid.org/0000-0001-8345-4937 |
| work_keys_str_mv | AT rechtdaniel supersaturatingsiliconwithtransitionmetalsbyionimplantationandpulsedlasermelting AT smithmatthewj supersaturatingsiliconwithtransitionmetalsbyionimplantationandpulsedlasermelting AT charnvanichborikarnsupakit supersaturatingsiliconwithtransitionmetalsbyionimplantationandpulsedlasermelting AT sullivanjosepht supersaturatingsiliconwithtransitionmetalsbyionimplantationandpulsedlasermelting AT winklermarkt supersaturatingsiliconwithtransitionmetalsbyionimplantationandpulsedlasermelting AT mathewsjay supersaturatingsiliconwithtransitionmetalsbyionimplantationandpulsedlasermelting AT warrenderjeffreym supersaturatingsiliconwithtransitionmetalsbyionimplantationandpulsedlasermelting AT buonassisitonio supersaturatingsiliconwithtransitionmetalsbyionimplantationandpulsedlasermelting AT williamsjamess supersaturatingsiliconwithtransitionmetalsbyionimplantationandpulsedlasermelting AT gradecaksilvija supersaturatingsiliconwithtransitionmetalsbyionimplantationandpulsedlasermelting AT azizmichaelj supersaturatingsiliconwithtransitionmetalsbyionimplantationandpulsedlasermelting |