Microelectromechanical (MEMS) structures for thin film property measurement

Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1998.

Bibliographic Details
Main Author: Blanchet, Aaron R. (Aaron Robert), 1974-
Other Authors: Carl V. Thompson.
Format: Thesis
Language:eng
Published: Massachusetts Institute of Technology 2005
Subjects:
Online Access:http://hdl.handle.net/1721.1/9735
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author Blanchet, Aaron R. (Aaron Robert), 1974-
author2 Carl V. Thompson.
author_facet Carl V. Thompson.
Blanchet, Aaron R. (Aaron Robert), 1974-
author_sort Blanchet, Aaron R. (Aaron Robert), 1974-
collection MIT
description Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1998.
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spelling mit-1721.1/97352020-05-08T16:36:43Z Microelectromechanical (MEMS) structures for thin film property measurement MEMS structures for thin film property measurement Blanchet, Aaron R. (Aaron Robert), 1974- Carl V. Thompson. Massachusetts Institute of Technology. Department of Materials Science and Engineering Materials Science and Engineering Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1998. Includes bibliographical references (leaf 87). Microelectromechanical systems (MEMS) are becoming the bases for an important industry with potential applications in numerous fields. The current study explores the use of MEMS-based, electrically-actuated structures to determine thin film mechanical properties, including intrinsic stresses of deposited metal films. An overview of the importance of thin film stress measurement and the advantages of this particular MEMS-­based technique provides motivation for this study. A new analysis of the mechanics in bilayer beams is presented, and is used to relate changes in electrical measurements to the intrinsic stress of films deposited on micromachined beams. Proof-of-principle studies using evaporatively deposited silver films were carried out, and showed agreement in stresses measured using different MEMS-based devices, but the same beam analysis. Stress was measured through experiments using electrical "pull-in" of beams and results are compared both to curvature studies using MEMS-based cantilevers and to standard wafer-based, scanning-laser curvature analysis. Thermal cycling was performed on all the devices, yielding data suggesting different rates of thin film stress relaxation for the films deposited on MEMS-based devices and a film on an oxidized Si wafer. Differences in stress relaxation rates are attributed to the different interfaces involved. These studies point to future work which will lead to optimized MEMS-based devices to be used for high-sensitivity, in-situ, thin film stress measurements. by Aaron R. Blanchet. S.M. 2005-08-19T19:48:48Z 2005-08-19T19:48:48Z 1998 1998 Thesis http://hdl.handle.net/1721.1/9735 42713261 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 87 leaves 5246837 bytes 5246593 bytes application/pdf application/pdf application/pdf Massachusetts Institute of Technology
spellingShingle Materials Science and Engineering
Blanchet, Aaron R. (Aaron Robert), 1974-
Microelectromechanical (MEMS) structures for thin film property measurement
title Microelectromechanical (MEMS) structures for thin film property measurement
title_full Microelectromechanical (MEMS) structures for thin film property measurement
title_fullStr Microelectromechanical (MEMS) structures for thin film property measurement
title_full_unstemmed Microelectromechanical (MEMS) structures for thin film property measurement
title_short Microelectromechanical (MEMS) structures for thin film property measurement
title_sort microelectromechanical mems structures for thin film property measurement
topic Materials Science and Engineering
url http://hdl.handle.net/1721.1/9735
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