Ferroelectric-gated terahertz plasmonics on graphene
Inspired by recent advancement of ferroelectric-gated memories and transistors, we propose a design of ferroelectric-gated nanoplasmonic devices based on graphene sheets clamped in ferroelectric crystals. We show that the two-dimensional plasmons in graphene can strongly couple with the phonon-polar...
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American Institute of Physics (AIP)
2015
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Online Access: | http://hdl.handle.net/1721.1/97426 https://orcid.org/0000-0003-0501-8843 https://orcid.org/0000-0002-7433-8341 https://orcid.org/0000-0002-9813-2401 https://orcid.org/0000-0001-5713-629X |
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author | Jin, Dafei Kumar, Anshuman Hung Fung, Kin Xu, Jun Fang, Nicholas Xuanlai |
author2 | Massachusetts Institute of Technology. Department of Mechanical Engineering |
author_facet | Massachusetts Institute of Technology. Department of Mechanical Engineering Jin, Dafei Kumar, Anshuman Hung Fung, Kin Xu, Jun Fang, Nicholas Xuanlai |
author_sort | Jin, Dafei |
collection | MIT |
description | Inspired by recent advancement of ferroelectric-gated memories and transistors, we propose a design of ferroelectric-gated nanoplasmonic devices based on graphene sheets clamped in ferroelectric crystals. We show that the two-dimensional plasmons in graphene can strongly couple with the phonon-polaritons in ferroelectrics, leading to characteristic modal wavelength of the order of 100–200 nm at low temperature and low-THz frequencies albeit with an appreciable dissipation. By patterning the ferroelectrics into different domains, one can produce compact on-chip plasmonic waveguides, which exhibit negligible crosstalk even at 20 nm separation distance. Harnessing the memory effect of ferroelectrics, low-power operation can be achieved on these plasmonic waveguides. |
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id | mit-1721.1/97426 |
institution | Massachusetts Institute of Technology |
language | en_US |
last_indexed | 2024-09-23T10:51:42Z |
publishDate | 2015 |
publisher | American Institute of Physics (AIP) |
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spelling | mit-1721.1/974262022-09-27T15:30:47Z Ferroelectric-gated terahertz plasmonics on graphene Terahertz plasmonics in ferroelectric-gated graphene Jin, Dafei Kumar, Anshuman Hung Fung, Kin Xu, Jun Fang, Nicholas Xuanlai Massachusetts Institute of Technology. Department of Mechanical Engineering Jin, Dafei Kumar, Anshuman Hung Fung, Kin Xu, Jun Fang, Nicholas Xuanlai Inspired by recent advancement of ferroelectric-gated memories and transistors, we propose a design of ferroelectric-gated nanoplasmonic devices based on graphene sheets clamped in ferroelectric crystals. We show that the two-dimensional plasmons in graphene can strongly couple with the phonon-polaritons in ferroelectrics, leading to characteristic modal wavelength of the order of 100–200 nm at low temperature and low-THz frequencies albeit with an appreciable dissipation. By patterning the ferroelectrics into different domains, one can produce compact on-chip plasmonic waveguides, which exhibit negligible crosstalk even at 20 nm separation distance. Harnessing the memory effect of ferroelectrics, low-power operation can be achieved on these plasmonic waveguides. National Science Foundation (U.S.) (ECCS Award 1028568) United States. Air Force Office of Scientific Research. Multidisciplinary University Research Initiative (Award FA9550-12-1-0488) 2015-06-15T17:49:05Z 2015-06-15T17:49:05Z 2013-05 2012-10 Article http://purl.org/eprint/type/JournalArticle 00036951 1077-3118 http://hdl.handle.net/1721.1/97426 Jin, Dafei, Anshuman Kumar, Kin Hung Fung, Jun Xu, and Nicholas X. Fang. “Terahertz Plasmonics in Ferroelectric-Gated Graphene.” Appl. Phys. Lett. 102, no. 20 (2013): 201118. https://orcid.org/0000-0003-0501-8843 https://orcid.org/0000-0002-7433-8341 https://orcid.org/0000-0002-9813-2401 https://orcid.org/0000-0001-5713-629X en_US http://dx.doi.org/10.1063/1.4807762 Applied Physics Letters Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/ application/pdf American Institute of Physics (AIP) arXiv |
spellingShingle | Jin, Dafei Kumar, Anshuman Hung Fung, Kin Xu, Jun Fang, Nicholas Xuanlai Ferroelectric-gated terahertz plasmonics on graphene |
title | Ferroelectric-gated terahertz plasmonics on graphene |
title_full | Ferroelectric-gated terahertz plasmonics on graphene |
title_fullStr | Ferroelectric-gated terahertz plasmonics on graphene |
title_full_unstemmed | Ferroelectric-gated terahertz plasmonics on graphene |
title_short | Ferroelectric-gated terahertz plasmonics on graphene |
title_sort | ferroelectric gated terahertz plasmonics on graphene |
url | http://hdl.handle.net/1721.1/97426 https://orcid.org/0000-0003-0501-8843 https://orcid.org/0000-0002-7433-8341 https://orcid.org/0000-0002-9813-2401 https://orcid.org/0000-0001-5713-629X |
work_keys_str_mv | AT jindafei ferroelectricgatedterahertzplasmonicsongraphene AT kumaranshuman ferroelectricgatedterahertzplasmonicsongraphene AT hungfungkin ferroelectricgatedterahertzplasmonicsongraphene AT xujun ferroelectricgatedterahertzplasmonicsongraphene AT fangnicholasxuanlai ferroelectricgatedterahertzplasmonicsongraphene AT jindafei terahertzplasmonicsinferroelectricgatedgraphene AT kumaranshuman terahertzplasmonicsinferroelectricgatedgraphene AT hungfungkin terahertzplasmonicsinferroelectricgatedgraphene AT xujun terahertzplasmonicsinferroelectricgatedgraphene AT fangnicholasxuanlai terahertzplasmonicsinferroelectricgatedgraphene |