Proximity-Driven Enhanced Magnetic Order at Ferromagnetic-Insulator–Magnetic-Topological-Insulator Interface

Proximity-Driven Enhanced Magnetic Order at Ferromagnetic-Insulator–Magnetic-Topological-Insulator Interface

Magnetic exchange driven proximity effect at a magnetic-insulator–topological-insulator (MI-TI) interface provides a rich playground for novel phenomena as well as a way to realize low energy dissipation quantum devices. Here we report a dramatic enhancement of proximity exchange coupling in the MI/...

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Bibliographic Details
Main Authors: Li, Mingda, Kirby, Brian. J., Jamer, Michelle E., Cui, Wenping, Wu, Lijun, Wei, Peng, Zhu, Yimei, Heiman, Don, Li, Ju, Chang, Cui-zu, Moodera, Jagadeesh
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:English
Published: American Physical Society 2015
Online Access:http://hdl.handle.net/1721.1/98090
https://orcid.org/0000-0002-2480-1211
https://orcid.org/0000-0001-7413-5715
https://orcid.org/0000-0003-2289-6007
https://orcid.org/0000-0002-7841-8058
Description
Summary:Magnetic exchange driven proximity effect at a magnetic-insulator–topological-insulator (MI-TI) interface provides a rich playground for novel phenomena as well as a way to realize low energy dissipation quantum devices. Here we report a dramatic enhancement of proximity exchange coupling in the MI/magnetic-TI EuS/Sb[subscript 2-x]V[subscript x]Te[subscript 3] hybrid heterostructure, where V doping is used to drive the TI (Sb[subscript 2]Te[subscript 3]) magnetic. We observe an artificial antiferromagneticlike structure near the MI-TI interface, which may account for the enhanced proximity coupling. The interplay between the proximity effect and doping in a hybrid heterostructure provides insights into the engineering of magnetic ordering.

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