Diameter dependence of thermoelectric power of semiconducting carbon nanotubes
We calculate the thermoelectric power (or thermopower) of many semiconducting single wall carbon nanotubes (s-SWNTs) within a diameter range 0.5–1.5 nm by using the Boltzmann transport formalism combined with an extended tight-binding model. We find that the thermopower of s-SWNTs increases as the t...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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American Physical Society
2015
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| Online Access: | http://hdl.handle.net/1721.1/99401 https://orcid.org/0000-0001-8492-2261 |
| _version_ | 1811095811184918528 |
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| author | Hung, Nguyen T. Nugraha, Ahmad R. T. Hasdeo, Eddwi H. Saito, Riichiro Dresselhaus, Mildred |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Hung, Nguyen T. Nugraha, Ahmad R. T. Hasdeo, Eddwi H. Saito, Riichiro Dresselhaus, Mildred |
| author_sort | Hung, Nguyen T. |
| collection | MIT |
| description | We calculate the thermoelectric power (or thermopower) of many semiconducting single wall carbon nanotubes (s-SWNTs) within a diameter range 0.5–1.5 nm by using the Boltzmann transport formalism combined with an extended tight-binding model. We find that the thermopower of s-SWNTs increases as the tube diameter decreases. For some s-SWNTs with diameters less than 0.6 nm, the thermopower can reach a value larger than 2000 μV/K at room temperature, which is about 6 to 10 times larger than that found in commonly used thermoelectric materials. The large thermopower values may be attributed to the one dimensionality of the nanotubes and to the presence of large band gaps of the small-diameter s-SWNTs. We derive an analytical formula to reproduce the numerical calculation of the thermopower and we find that the thermopower of a given s-SWNT is directly related with its band gap. The formula also explains the shape of the thermopower as a function of tube diameter, which looks similar to the shape of the so-called Kataura plot of the band gap dependence on tube diameter. |
| first_indexed | 2024-09-23T16:28:58Z |
| format | Article |
| id | mit-1721.1/99401 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T16:28:58Z |
| publishDate | 2015 |
| publisher | American Physical Society |
| record_format | dspace |
| spelling | mit-1721.1/994012022-10-02T08:07:01Z Diameter dependence of thermoelectric power of semiconducting carbon nanotubes Hung, Nguyen T. Nugraha, Ahmad R. T. Hasdeo, Eddwi H. Saito, Riichiro Dresselhaus, Mildred Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Department of Physics Dresselhaus, Mildred We calculate the thermoelectric power (or thermopower) of many semiconducting single wall carbon nanotubes (s-SWNTs) within a diameter range 0.5–1.5 nm by using the Boltzmann transport formalism combined with an extended tight-binding model. We find that the thermopower of s-SWNTs increases as the tube diameter decreases. For some s-SWNTs with diameters less than 0.6 nm, the thermopower can reach a value larger than 2000 μV/K at room temperature, which is about 6 to 10 times larger than that found in commonly used thermoelectric materials. The large thermopower values may be attributed to the one dimensionality of the nanotubes and to the presence of large band gaps of the small-diameter s-SWNTs. We derive an analytical formula to reproduce the numerical calculation of the thermopower and we find that the thermopower of a given s-SWNT is directly related with its band gap. The formula also explains the shape of the thermopower as a function of tube diameter, which looks similar to the shape of the so-called Kataura plot of the band gap dependence on tube diameter. National Science Foundation (U.S.) (Grant DMR-1004147) 2015-10-22T12:09:27Z 2015-10-22T12:09:27Z 2015-10 2015-10 2015-10-21T22:00:09Z Article http://purl.org/eprint/type/JournalArticle 1098-0121 1550-235X http://hdl.handle.net/1721.1/99401 Hung, Nguyen T., Ahmad R. T. Nugraha, Eddwi H. Hasdeo, Mildred S. Dresselhaus, and Riichiro Saito. "Diameter dependence of thermoelectric power of semiconducting carbon nanotubes." Phys. Rev. B 92, 165426 (October 2015). © 2015 American Physical Society https://orcid.org/0000-0001-8492-2261 en http://dx.doi.org/10.1103/PhysRevB.92.165426 Physical Review B Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. American Physical Society application/pdf American Physical Society American Physical Society |
| spellingShingle | Hung, Nguyen T. Nugraha, Ahmad R. T. Hasdeo, Eddwi H. Saito, Riichiro Dresselhaus, Mildred Diameter dependence of thermoelectric power of semiconducting carbon nanotubes |
| title | Diameter dependence of thermoelectric power of semiconducting carbon nanotubes |
| title_full | Diameter dependence of thermoelectric power of semiconducting carbon nanotubes |
| title_fullStr | Diameter dependence of thermoelectric power of semiconducting carbon nanotubes |
| title_full_unstemmed | Diameter dependence of thermoelectric power of semiconducting carbon nanotubes |
| title_short | Diameter dependence of thermoelectric power of semiconducting carbon nanotubes |
| title_sort | diameter dependence of thermoelectric power of semiconducting carbon nanotubes |
| url | http://hdl.handle.net/1721.1/99401 https://orcid.org/0000-0001-8492-2261 |
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