Active sensing in silicon-based MEMS resonators
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2015.
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| Format: | Thesis |
| Language: | eng |
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Massachusetts Institute of Technology
2015
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| Online Access: | http://hdl.handle.net/1721.1/99778 |
| _version_ | 1826210812318973952 |
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| author | Marathe, Radhika (Radhika Atul) |
| author2 | Dana Weinstein. |
| author_facet | Dana Weinstein. Marathe, Radhika (Radhika Atul) |
| author_sort | Marathe, Radhika (Radhika Atul) |
| collection | MIT |
| description | Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2015. |
| first_indexed | 2024-09-23T14:56:08Z |
| format | Thesis |
| id | mit-1721.1/99778 |
| institution | Massachusetts Institute of Technology |
| language | eng |
| last_indexed | 2024-09-23T14:56:08Z |
| publishDate | 2015 |
| publisher | Massachusetts Institute of Technology |
| record_format | dspace |
| spelling | mit-1721.1/997782019-04-10T17:14:24Z Active sensing in silicon-based MEMS resonators Marathe, Radhika (Radhika Atul) Dana Weinstein. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science. Electrical Engineering and Computer Science. Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2015. This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections. Cataloged from student-submitted PDF version of thesis. Includes bibliographical references (pages 139-148). Microelectromechanical resonators are advantageous over traditional LC tanks and o-chip quartz crystals due to their high quality factors, small size and low power consumption. FET-sensing has been demonstrated in resonant body transistors (RBTs) to reach an order of magnitude higher frequencies than possible with passive resonators due to the greater sensing eciency of FET sensing over traditional mechanisms such as capacitive or piezoelectric sensing. This thesis explores FET-sensing in Si-based MEMS resonators with dielectric and piezoelectric materials for design of fully unreleased CMOS-integrated resonators for multi-GHz frequency applications. Monolithic integration of Si-based MEMS resonators into CMOS is critical for commercial applications due to reduced size, weight and parasitics. A vast majority of CMOS-integrated resonators require a release step to freely suspend their vibrating structures, necessitating costly, complex encapsulation methods. This thesis proposes the development of fully unreleased resonators in CMOS using acoustic confinement structures, which may be realized without any post-processing or packaging. These di-electrically driven, FET-sensed resonators may be fabricated at the transistor-level of a standard CMOS process, and are demonstrated upto 11:1 GHz with quality factors (Q) up to 252 with footprints of less than 5[mu] x 7[mu]m with temperature coefficients of frequency (TCF) < 3 ppm/K. While electrostatic resonators have been primarily explored in this work due to the availability of such dielectric materials in a standard CMOS stack, piezoelectric materials remain popular in commercial MEMS resonators for their high electromechanical coupling factors. Recent years have seen a push towards integration of piezoelectric materials into standard CMOS for switching and memory applications. This work explores the performance improvements arising from the integration of CMOS-ready piezoelectric materials such as AlN into a resonant body transistor. This is shown to improve transduction eciency for low insertion losses at multi-GHz frequencies, for applications in communications to microprocessor clocking. by Radhika Marathe. Ph. D. 2015-11-09T19:12:29Z 2015-11-09T19:12:29Z 2015 2015 Thesis http://hdl.handle.net/1721.1/99778 927407082 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 148 pages application/pdf Massachusetts Institute of Technology |
| spellingShingle | Electrical Engineering and Computer Science. Marathe, Radhika (Radhika Atul) Active sensing in silicon-based MEMS resonators |
| title | Active sensing in silicon-based MEMS resonators |
| title_full | Active sensing in silicon-based MEMS resonators |
| title_fullStr | Active sensing in silicon-based MEMS resonators |
| title_full_unstemmed | Active sensing in silicon-based MEMS resonators |
| title_short | Active sensing in silicon-based MEMS resonators |
| title_sort | active sensing in silicon based mems resonators |
| topic | Electrical Engineering and Computer Science. |
| url | http://hdl.handle.net/1721.1/99778 |
| work_keys_str_mv | AT maratheradhikaradhikaatul activesensinginsiliconbasedmemsresonators |