Gallium Nitride phononic crystal resonator
Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2015.
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| Format: | Thesis |
| Language: | eng |
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Massachusetts Institute of Technology
2015
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| Online Access: | http://hdl.handle.net/1721.1/99831 |
| _version_ | 1826191478807855104 |
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| author | Wang, Siping, S.M. Massachusetts Institute of Technology |
| author2 | Dana Weinstein |
| author_facet | Dana Weinstein Wang, Siping, S.M. Massachusetts Institute of Technology |
| author_sort | Wang, Siping, S.M. Massachusetts Institute of Technology |
| collection | MIT |
| description | Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2015. |
| first_indexed | 2024-09-23T08:56:30Z |
| format | Thesis |
| id | mit-1721.1/99831 |
| institution | Massachusetts Institute of Technology |
| language | eng |
| last_indexed | 2024-09-23T08:56:30Z |
| publishDate | 2015 |
| publisher | Massachusetts Institute of Technology |
| record_format | dspace |
| spelling | mit-1721.1/998312019-04-10T19:51:54Z Gallium Nitride phononic crystal resonator GaN phononic crystal resonator Wang, Siping, S.M. Massachusetts Institute of Technology Dana Weinstein Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science. Electrical Engineering and Computer Science. Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2015. Cataloged from PDF version of thesis. Includes bibliographical references (pages 41-42). We present a Gallium Nitride (GaN) Lamb Wave resonator using a Phononic Crystal (PnC) to selectively confine elastic vibrations with wide-band spurious mode suppression. A unique feature of the design demonstrated here is a folded PnC structure to relax energy confinement in the non-resonant dimension and to enable routing access of piezoelectric transducers inside the resonant cavity. This provides a clean spectrum over a wide frequency range and improves series resistance relative to transmission line or tethered resonators by allowing a low-impedance path for drive and sense electrodes. GaN resonators are demonstrated with wide-band suppression of spurious modes, f -Q product up to 3.06 x 1012, and resonator coupling coefficient k2.eff up to 0.23%. (filter BW up to 0.46%). Furthermore, these PnC GaN resonators exhibit record-breaking power handling, with IIP3 of +27.2dBm demonstrated at 993MHz. by Siping Wang. S.M. 2015-11-09T19:51:40Z 2015-11-09T19:51:40Z 2015 2015 Thesis http://hdl.handle.net/1721.1/99831 927353020 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 42 pages application/pdf Massachusetts Institute of Technology |
| spellingShingle | Electrical Engineering and Computer Science. Wang, Siping, S.M. Massachusetts Institute of Technology Gallium Nitride phononic crystal resonator |
| title | Gallium Nitride phononic crystal resonator |
| title_full | Gallium Nitride phononic crystal resonator |
| title_fullStr | Gallium Nitride phononic crystal resonator |
| title_full_unstemmed | Gallium Nitride phononic crystal resonator |
| title_short | Gallium Nitride phononic crystal resonator |
| title_sort | gallium nitride phononic crystal resonator |
| topic | Electrical Engineering and Computer Science. |
| url | http://hdl.handle.net/1721.1/99831 |
| work_keys_str_mv | AT wangsipingsmmassachusettsinstituteoftechnology galliumnitridephononiccrystalresonator AT wangsipingsmmassachusettsinstituteoftechnology ganphononiccrystalresonator |