Interfacial chemistry and valence band offset between GaN and Al2O3 studied by X-ray photoelectron spectroscopy
The interface region between Ga-face n-type GaN and Al2O3 dielectric (achieved via atomic-layer deposition or ALD) is investigated by X-ray photoelectron spectroscopy (XPS). An increase in the Ga-O to Ga-N bond intensity ratio following Al2O3 deposition implies that the growth of an interfacial gall...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2013
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| Online Access: | https://hdl.handle.net/10356/100139 http://hdl.handle.net/10220/10961 |
| _version_ | 1811686396101918720 |
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| author | Duan, T. L. Pan, J. S. Ang, Diing Shenp |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Duan, T. L. Pan, J. S. Ang, Diing Shenp |
| author_sort | Duan, T. L. |
| collection | NTU |
| description | The interface region between Ga-face n-type GaN and Al2O3 dielectric (achieved via atomic-layer deposition or ALD) is investigated by X-ray photoelectron spectroscopy (XPS). An increase in the Ga-O to Ga-N bond intensity ratio following Al2O3 deposition implies that the growth of an interfacial gallium sub-oxide (GaOx) layer occurred during the ALD process. This finding may be ascribed to GaN oxidation, which may still happen following the reduction of a thin native GaOx by trimethylaluminum (TMA) in the initial TMA-only cycles. The valence band offset between GaN and Al2O3, obtained using both core-level and valence band spectra, is found to vary with the thickness of the deposited Al2O3. This observation may be explained by an upward energy band bending at the GaN surface (due to the spontaneous polarization induced negative bound charge on the Ga-face GaN) and the intrinsic limitation of the XPS method for band offset determination. |
| first_indexed | 2024-10-01T04:59:45Z |
| format | Journal Article |
| id | ntu-10356/100139 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:59:45Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/1001392020-03-07T14:02:36Z Interfacial chemistry and valence band offset between GaN and Al2O3 studied by X-ray photoelectron spectroscopy Duan, T. L. Pan, J. S. Ang, Diing Shenp School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering The interface region between Ga-face n-type GaN and Al2O3 dielectric (achieved via atomic-layer deposition or ALD) is investigated by X-ray photoelectron spectroscopy (XPS). An increase in the Ga-O to Ga-N bond intensity ratio following Al2O3 deposition implies that the growth of an interfacial gallium sub-oxide (GaOx) layer occurred during the ALD process. This finding may be ascribed to GaN oxidation, which may still happen following the reduction of a thin native GaOx by trimethylaluminum (TMA) in the initial TMA-only cycles. The valence band offset between GaN and Al2O3, obtained using both core-level and valence band spectra, is found to vary with the thickness of the deposited Al2O3. This observation may be explained by an upward energy band bending at the GaN surface (due to the spontaneous polarization induced negative bound charge on the Ga-face GaN) and the intrinsic limitation of the XPS method for band offset determination. Published version 2013-07-05T02:00:22Z 2019-12-06T20:17:19Z 2013-07-05T02:00:22Z 2019-12-06T20:17:19Z 2013 2013 Journal Article Duan, T. L., Pan, J. S., & Ang, D. S. (2013). Interfacial chemistry and valence band offset between GaN and Al2O3 studied by X-ray photoelectron spectroscopy. Applied Physics Letters, 102(20), 201604-. 0003-6951 https://hdl.handle.net/10356/100139 http://hdl.handle.net/10220/10961 10.1063/1.4807736 en Applied physics letters © 2013 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4807736]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Duan, T. L. Pan, J. S. Ang, Diing Shenp Interfacial chemistry and valence band offset between GaN and Al2O3 studied by X-ray photoelectron spectroscopy |
| title | Interfacial chemistry and valence band offset between GaN and Al2O3 studied by X-ray photoelectron spectroscopy |
| title_full | Interfacial chemistry and valence band offset between GaN and Al2O3 studied by X-ray photoelectron spectroscopy |
| title_fullStr | Interfacial chemistry and valence band offset between GaN and Al2O3 studied by X-ray photoelectron spectroscopy |
| title_full_unstemmed | Interfacial chemistry and valence band offset between GaN and Al2O3 studied by X-ray photoelectron spectroscopy |
| title_short | Interfacial chemistry and valence band offset between GaN and Al2O3 studied by X-ray photoelectron spectroscopy |
| title_sort | interfacial chemistry and valence band offset between gan and al2o3 studied by x ray photoelectron spectroscopy |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/100139 http://hdl.handle.net/10220/10961 |
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