Interfacial chemistry and valence band offset between GaN and Al2O3 studied by X-ray photoelectron spectroscopy
The interface region between Ga-face n-type GaN and Al2O3 dielectric (achieved via atomic-layer deposition or ALD) is investigated by X-ray photoelectron spectroscopy (XPS). An increase in the Ga-O to Ga-N bond intensity ratio following Al2O3 deposition implies that the growth of an interfacial gall...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/100139 http://hdl.handle.net/10220/10961 |