CMOS-MEMS capacitive sensors for intra-cranial pressure monitoring : sensor fabrication & system design

CMOS-MEMS capacitive sensors for intra-cranial pressure monitoring : sensor fabrication & system design

Low-frequency variation of intracranial pressure (ICP) is a key indicator determining the successful outcome of a patient, subjected to traumatic brain injury (TBI). Post-trauma ICP increase can lead to fatal secondary injuries and hence continuous ICP monitoring would be an essential modality requi...

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Bibliographic Details
Main Authors: George, Arup K., Chan, Wai Pan, Narducci, Margarita Sofia, Kong, Zhi Hui, Je, Minkyu
Other Authors: School of Electrical and Electronic Engineering
Format: Conference Paper
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/100181
http://hdl.handle.net/10220/13608

Internet

https://hdl.handle.net/10356/100181
http://hdl.handle.net/10220/13608

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