Influence of N doping on the Rashba coefficient, semiconductor-metal transition, and electron effective mass in InSb1−xNx nanowires : Ten-band k∙p model
The electronic structures of InSb1−xNx nanowires are investigated using the ten-band k·p method. It is found that nitrogen increases the Rashba coefficient of the nanowires dramatically. For thick nanowires, the Rashba coefficient may increase by more than 20 times. The semiconductor-metal transit...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/100239 http://hdl.handle.net/10220/17869 |
| _version_ | 1826115836807479296 |
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| author | Li, S. Xia, J. Zhang, X. Fan, Weijun |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Li, S. Xia, J. Zhang, X. Fan, Weijun |
| author_sort | Li, S. |
| collection | NTU |
| description | The electronic structures of InSb1−xNx nanowires are investigated using the ten-band k·p method. It is found
that nitrogen increases the Rashba coefficient of the nanowires dramatically. For thick nanowires, the Rashba
coefficient may increase by more than 20 times. The semiconductor-metal transition occurs more easily in
InSb1−xNx nanowires than in InSb nanowires. The electronic structure of InSb1−xNx nanowires is very different
from that of the bulk material. For fixed x the bulk material is a semimetal, while the nanowires are metal-like.
In InSb1−xNx bulk material and thick nanowires, an interesting decrease of electron effective mass is observed
near k=0 which is induced by the nitrogen, but this phenomenon disappears in thin nanowires. |
| first_indexed | 2024-10-01T04:01:38Z |
| format | Journal Article |
| id | ntu-10356/100239 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:01:38Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/1002392020-03-07T14:02:45Z Influence of N doping on the Rashba coefficient, semiconductor-metal transition, and electron effective mass in InSb1−xNx nanowires : Ten-band k∙p model Li, S. Xia, J. Zhang, X. Fan, Weijun School of Electrical and Electronic Engineering Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Electrical and Electronic Engineering The electronic structures of InSb1−xNx nanowires are investigated using the ten-band k·p method. It is found that nitrogen increases the Rashba coefficient of the nanowires dramatically. For thick nanowires, the Rashba coefficient may increase by more than 20 times. The semiconductor-metal transition occurs more easily in InSb1−xNx nanowires than in InSb nanowires. The electronic structure of InSb1−xNx nanowires is very different from that of the bulk material. For fixed x the bulk material is a semimetal, while the nanowires are metal-like. In InSb1−xNx bulk material and thick nanowires, an interesting decrease of electron effective mass is observed near k=0 which is induced by the nitrogen, but this phenomenon disappears in thin nanowires. Published version 2013-11-27T05:23:14Z 2019-12-06T20:19:04Z 2013-11-27T05:23:14Z 2019-12-06T20:19:04Z 2007 2007 Journal Article Zhang, X. W., Fan, W. J., Li, S. S., & Xia, J. B. (2007). Influence of N doping on the Rashba coefficient, semiconductor-metal transition, and electron effective mass in InSb1−xNx nanowires: Ten-band k∙p model. Physical Review B, 75(20), 205331(6 pages). https://hdl.handle.net/10356/100239 http://hdl.handle.net/10220/17869 10.1103/PhysRevB.75.205331 en Physical review B © 2007 The American Physical Society. This paper was published in Physical Review B and is made available as an electronic reprint (preprint) with permission of American Physical Society. The paper can be found at the following official DOI: [http://dx.doi.org/10.1103/PhysRevB.75.205331]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 6 p. application/pdf |
| spellingShingle | Electrical and Electronic Engineering Li, S. Xia, J. Zhang, X. Fan, Weijun Influence of N doping on the Rashba coefficient, semiconductor-metal transition, and electron effective mass in InSb1−xNx nanowires : Ten-band k∙p model |
| title | Influence of N doping on the Rashba coefficient, semiconductor-metal transition, and electron effective mass in InSb1−xNx nanowires : Ten-band k∙p model |
| title_full | Influence of N doping on the Rashba coefficient, semiconductor-metal transition, and electron effective mass in InSb1−xNx nanowires : Ten-band k∙p model |
| title_fullStr | Influence of N doping on the Rashba coefficient, semiconductor-metal transition, and electron effective mass in InSb1−xNx nanowires : Ten-band k∙p model |
| title_full_unstemmed | Influence of N doping on the Rashba coefficient, semiconductor-metal transition, and electron effective mass in InSb1−xNx nanowires : Ten-band k∙p model |
| title_short | Influence of N doping on the Rashba coefficient, semiconductor-metal transition, and electron effective mass in InSb1−xNx nanowires : Ten-band k∙p model |
| title_sort | influence of n doping on the rashba coefficient semiconductor metal transition and electron effective mass in insb1 xnx nanowires ten band k∙p model |
| topic | Electrical and Electronic Engineering |
| url | https://hdl.handle.net/10356/100239 http://hdl.handle.net/10220/17869 |
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