Low temperature direct wafer bonding of GaAs to Si via plasma activation
The present work seeks to demonstrate the elegance and simplicity of monolithic integration via plasma-activated direct wafer bonding. Two-inch gallium arsenide and silicon wafers were directly bonded through argon plasma activation. The highest specific bond energy was found for plasma conditions o...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2014
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| Online Access: | https://hdl.handle.net/10356/100308 http://hdl.handle.net/10220/18646 |
| _version_ | 1811679352917590016 |
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| author | Xu, D. W. Fitzgerald, Eugene A. Yeo, Chiew Yong Yoon, Soon Fatt |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Xu, D. W. Fitzgerald, Eugene A. Yeo, Chiew Yong Yoon, Soon Fatt |
| author_sort | Xu, D. W. |
| collection | NTU |
| description | The present work seeks to demonstrate the elegance and simplicity of monolithic integration via plasma-activated direct wafer bonding. Two-inch gallium arsenide and silicon wafers were directly bonded through argon plasma activation. The highest specific bond energy was found for plasma conditions of 30 s, 120 mTorr, and 200 W, followed by low temperature annealing at 140 °C, and was 478 mJ/m2. Through this process, a processed silicon integrated circuit could be integrated with optoelectronics gallium arsenide on a wafer scale. |
| first_indexed | 2024-10-01T03:07:48Z |
| format | Journal Article |
| id | ntu-10356/100308 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:07:48Z |
| publishDate | 2014 |
| record_format | dspace |
| spelling | ntu-10356/1003082020-03-07T14:00:30Z Low temperature direct wafer bonding of GaAs to Si via plasma activation Xu, D. W. Fitzgerald, Eugene A. Yeo, Chiew Yong Yoon, Soon Fatt School of Electrical and Electronic Engineering DRNTU::Science::Physics The present work seeks to demonstrate the elegance and simplicity of monolithic integration via plasma-activated direct wafer bonding. Two-inch gallium arsenide and silicon wafers were directly bonded through argon plasma activation. The highest specific bond energy was found for plasma conditions of 30 s, 120 mTorr, and 200 W, followed by low temperature annealing at 140 °C, and was 478 mJ/m2. Through this process, a processed silicon integrated circuit could be integrated with optoelectronics gallium arsenide on a wafer scale. Published version 2014-01-21T06:33:52Z 2019-12-06T20:20:13Z 2014-01-21T06:33:52Z 2019-12-06T20:20:13Z 2013 2013 Journal Article Yeo, C. Y., Xu, D. W., Yoon, S. F., & Fitzgerald, E. A. (2013). Low temperature direct wafer bonding of GaAs to Si via plasma activation. Applied physics letters, 102(5), 054107-. 0003-6951 https://hdl.handle.net/10356/100308 http://hdl.handle.net/10220/18646 10.1063/1.4791584 en Applied physics letters © 2013 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4791584]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf |
| spellingShingle | DRNTU::Science::Physics Xu, D. W. Fitzgerald, Eugene A. Yeo, Chiew Yong Yoon, Soon Fatt Low temperature direct wafer bonding of GaAs to Si via plasma activation |
| title | Low temperature direct wafer bonding of GaAs to Si via plasma activation |
| title_full | Low temperature direct wafer bonding of GaAs to Si via plasma activation |
| title_fullStr | Low temperature direct wafer bonding of GaAs to Si via plasma activation |
| title_full_unstemmed | Low temperature direct wafer bonding of GaAs to Si via plasma activation |
| title_short | Low temperature direct wafer bonding of GaAs to Si via plasma activation |
| title_sort | low temperature direct wafer bonding of gaas to si via plasma activation |
| topic | DRNTU::Science::Physics |
| url | https://hdl.handle.net/10356/100308 http://hdl.handle.net/10220/18646 |
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