Improvement of GaInNAs p-i-n photodetector responsivity by antimony incorporation
Deep-level transient spectra DLTS and photoresponsivity were measured for Ga0.90In0.10N0.033As0.967 /GaAs and Ga0.96In0.04N0.028As0.967Sb0.005 /GaAs p-i-n photodetector structures. The GaInNAs and GaInNAsSb layers were grown closely lattice matched to GaAs substrate at 460 °C using molecular be...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/100400 http://hdl.handle.net/10220/18128 |
| Summary: | Deep-level transient spectra DLTS and photoresponsivity were measured for
Ga0.90In0.10N0.033As0.967 /GaAs and Ga0.96In0.04N0.028As0.967Sb0.005 /GaAs p-i-n photodetector
structures. The GaInNAs and GaInNAsSb layers were grown closely lattice matched to GaAs
substrate at 460 °C using molecular beam epitaxy. Two hole-trap levels were observed in the DLTS
spectra of the GaInNAs sample with activation energies of 0.152 and 0.400 eV labeled as H-1 and
H-2 peak, respectively . The lower activation energy is believed to be associated with
nitrogen-related defects and the higher activation energy is associated with arsenic antisite defects
AsGa . Following the incorporation of Sb into GaInNAs, the H-1 peak vanished from the DLTS
spectra of the GaInNAsSb sample, and the AsGa defect-related DLTS signal was significantly
reduced. Analysis of the DLTS data also showed that the trap concentration related to AsGa was
reduced from 2.15 1015 to 2.58 1014 cm−3. The DLTS results are in good agreement with the
photoresponsivity results, in which the GaInNAsSb sample showed 10 higher photoresponse
compared to the GaInNAs sample. This indicates the incorporation of Sb into GaInNAs has
effectively improved the p-i-n photodetector device performance. |
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