Improvement of GaInNAs p-i-n photodetector responsivity by antimony incorporation
Deep-level transient spectra DLTS and photoresponsivity were measured for Ga0.90In0.10N0.033As0.967 /GaAs and Ga0.96In0.04N0.028As0.967Sb0.005 /GaAs p-i-n photodetector structures. The GaInNAs and GaInNAsSb layers were grown closely lattice matched to GaAs substrate at 460 °C using molecular be...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/100400 http://hdl.handle.net/10220/18128 |
| _version_ | 1811696808180580352 |
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| author | Loke, Wan Khai Yoon, Soon Fatt Tan, K. H. Wicaksono, Satrio Fan, Weijun |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Loke, Wan Khai Yoon, Soon Fatt Tan, K. H. Wicaksono, Satrio Fan, Weijun |
| author_sort | Loke, Wan Khai |
| collection | NTU |
| description | Deep-level transient spectra DLTS and photoresponsivity were measured for
Ga0.90In0.10N0.033As0.967 /GaAs and Ga0.96In0.04N0.028As0.967Sb0.005 /GaAs p-i-n photodetector
structures. The GaInNAs and GaInNAsSb layers were grown closely lattice matched to GaAs
substrate at 460 °C using molecular beam epitaxy. Two hole-trap levels were observed in the DLTS
spectra of the GaInNAs sample with activation energies of 0.152 and 0.400 eV labeled as H-1 and
H-2 peak, respectively . The lower activation energy is believed to be associated with
nitrogen-related defects and the higher activation energy is associated with arsenic antisite defects
AsGa . Following the incorporation of Sb into GaInNAs, the H-1 peak vanished from the DLTS
spectra of the GaInNAsSb sample, and the AsGa defect-related DLTS signal was significantly
reduced. Analysis of the DLTS data also showed that the trap concentration related to AsGa was
reduced from 2.15 1015 to 2.58 1014 cm−3. The DLTS results are in good agreement with the
photoresponsivity results, in which the GaInNAsSb sample showed 10 higher photoresponse
compared to the GaInNAs sample. This indicates the incorporation of Sb into GaInNAs has
effectively improved the p-i-n photodetector device performance. |
| first_indexed | 2024-10-01T07:45:15Z |
| format | Journal Article |
| id | ntu-10356/100400 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:45:15Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/1004002020-03-07T14:00:34Z Improvement of GaInNAs p-i-n photodetector responsivity by antimony incorporation Loke, Wan Khai Yoon, Soon Fatt Tan, K. H. Wicaksono, Satrio Fan, Weijun School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics Deep-level transient spectra DLTS and photoresponsivity were measured for Ga0.90In0.10N0.033As0.967 /GaAs and Ga0.96In0.04N0.028As0.967Sb0.005 /GaAs p-i-n photodetector structures. The GaInNAs and GaInNAsSb layers were grown closely lattice matched to GaAs substrate at 460 °C using molecular beam epitaxy. Two hole-trap levels were observed in the DLTS spectra of the GaInNAs sample with activation energies of 0.152 and 0.400 eV labeled as H-1 and H-2 peak, respectively . The lower activation energy is believed to be associated with nitrogen-related defects and the higher activation energy is associated with arsenic antisite defects AsGa . Following the incorporation of Sb into GaInNAs, the H-1 peak vanished from the DLTS spectra of the GaInNAsSb sample, and the AsGa defect-related DLTS signal was significantly reduced. Analysis of the DLTS data also showed that the trap concentration related to AsGa was reduced from 2.15 1015 to 2.58 1014 cm−3. The DLTS results are in good agreement with the photoresponsivity results, in which the GaInNAsSb sample showed 10 higher photoresponse compared to the GaInNAs sample. This indicates the incorporation of Sb into GaInNAs has effectively improved the p-i-n photodetector device performance. Published version 2013-12-06T04:30:28Z 2019-12-06T20:21:51Z 2013-12-06T04:30:28Z 2019-12-06T20:21:51Z 2007 2007 Journal Article Loke, W. K., Yoon, S. F., Tan, K. H., Wicaksono, S., & Fan, W. (2007). Improvement of GaInNAs p-i-n photodetector responsivity by antimony incorporation. Journal of Applied Physics, 101(3), 033122. 0021-8979 https://hdl.handle.net/10356/100400 http://hdl.handle.net/10220/18128 10.1063/1.2435990 en Journal of applied physics © 2007 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.2435990. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 5 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics Loke, Wan Khai Yoon, Soon Fatt Tan, K. H. Wicaksono, Satrio Fan, Weijun Improvement of GaInNAs p-i-n photodetector responsivity by antimony incorporation |
| title | Improvement of GaInNAs p-i-n photodetector responsivity by antimony incorporation |
| title_full | Improvement of GaInNAs p-i-n photodetector responsivity by antimony incorporation |
| title_fullStr | Improvement of GaInNAs p-i-n photodetector responsivity by antimony incorporation |
| title_full_unstemmed | Improvement of GaInNAs p-i-n photodetector responsivity by antimony incorporation |
| title_short | Improvement of GaInNAs p-i-n photodetector responsivity by antimony incorporation |
| title_sort | improvement of gainnas p i n photodetector responsivity by antimony incorporation |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics |
| url | https://hdl.handle.net/10356/100400 http://hdl.handle.net/10220/18128 |
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