Comparison of nitrogen compositions in the as-grown GaN[sub x]As[sub 1−x] on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy
High-resolution x-ray diffraction (HRXRD) and secondary-ion mass spectroscopy were used to measure the N compositions of a series of as-grown GaNAs samples grown by solid-source molecular-beam epitaxy. We found that N compositions measured by the two methods agree well at lower N compositions (x<...
| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2013
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| Online Access: | https://hdl.handle.net/10356/100401 http://hdl.handle.net/10220/18003 |
| _version_ | 1826122975890374656 |
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| author | Fan, Weijun Yoon, Soon Fatt Ng, T. K. Wang, S. Z. Loke, Wan Khai Liu, R. Wee, A. |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Fan, Weijun Yoon, Soon Fatt Ng, T. K. Wang, S. Z. Loke, Wan Khai Liu, R. Wee, A. |
| author_sort | Fan, Weijun |
| collection | NTU |
| description | High-resolution x-ray diffraction (HRXRD) and secondary-ion mass spectroscopy were used to measure the N compositions of a series of as-grown GaNAs samples grown by solid-source molecular-beam epitaxy. We found that N compositions measured by the two methods agree well at lower N compositions (x<3%) and deviate at larger N (x>3%)compositions. The HRXRD measurement by using Vegard’s law to extract the lattice constant of GaNAs, underestimates N composition at larger N compositions. We found that the underestimation is up to 14.3% at the x=4.2%. In order to explain the deviation, a model for analyzing the correlation between lattice parameters and point defects in the epilayer was carried out. |
| first_indexed | 2024-10-01T05:57:03Z |
| format | Journal Article |
| id | ntu-10356/100401 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:57:03Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/1004012020-03-07T14:00:34Z Comparison of nitrogen compositions in the as-grown GaN[sub x]As[sub 1−x] on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy Fan, Weijun Yoon, Soon Fatt Ng, T. K. Wang, S. Z. Loke, Wan Khai Liu, R. Wee, A. School of Electrical and Electronic Engineering Department of Physics, National University of Singapore DRNTU::Engineering::Electrical and electronic engineering High-resolution x-ray diffraction (HRXRD) and secondary-ion mass spectroscopy were used to measure the N compositions of a series of as-grown GaNAs samples grown by solid-source molecular-beam epitaxy. We found that N compositions measured by the two methods agree well at lower N compositions (x<3%) and deviate at larger N (x>3%)compositions. The HRXRD measurement by using Vegard’s law to extract the lattice constant of GaNAs, underestimates N composition at larger N compositions. We found that the underestimation is up to 14.3% at the x=4.2%. In order to explain the deviation, a model for analyzing the correlation between lattice parameters and point defects in the epilayer was carried out. Published version 2013-12-04T01:55:07Z 2019-12-06T20:21:53Z 2013-12-04T01:55:07Z 2019-12-06T20:21:53Z 2002 2002 Journal Article Fan, W., Yoon, S. F., Ng, T. K., Wang, S. Z., Loke, W. K., Liu, R., & Wee, A. (2002). Comparison of nitrogen compositions in the as-grown GaN[sub x]As[sub 1−x] on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy. Applied physics letters, 80(22), 4136. 0003-6951 https://hdl.handle.net/10356/100401 http://hdl.handle.net/10220/18003 10.1063/1.1483913 en Applied physics letters © 2002 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.1483913]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 3 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Fan, Weijun Yoon, Soon Fatt Ng, T. K. Wang, S. Z. Loke, Wan Khai Liu, R. Wee, A. Comparison of nitrogen compositions in the as-grown GaN[sub x]As[sub 1−x] on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy |
| title | Comparison of nitrogen compositions in the as-grown GaN[sub x]As[sub 1−x] on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy |
| title_full | Comparison of nitrogen compositions in the as-grown GaN[sub x]As[sub 1−x] on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy |
| title_fullStr | Comparison of nitrogen compositions in the as-grown GaN[sub x]As[sub 1−x] on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy |
| title_full_unstemmed | Comparison of nitrogen compositions in the as-grown GaN[sub x]As[sub 1−x] on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy |
| title_short | Comparison of nitrogen compositions in the as-grown GaN[sub x]As[sub 1−x] on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy |
| title_sort | comparison of nitrogen compositions in the as grown gan sub x as sub 1 x on gaas measured by high resolution x ray diffraction and secondary ion mass spectroscopy |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/100401 http://hdl.handle.net/10220/18003 |
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