Demonstration of submicron-gate AlGaN/GaN high-electron-mobility transistors on silicon with complementary metal-oxide-semiconductor-compatible non-gold metal stack

Demonstration of submicron-gate AlGaN/GaN high-electron-mobility transistors on silicon with complementary metal-oxide-semiconductor-compatible non-gold metal stack

We have demonstrated 0.15-µm-gate-length AlGaN/GaN high-electron-mobility transistors (HEMTs) with direct-current (DC) and microwave performances for the first time using a complementary metal–oxide–semiconductor (CMOS)-compatible non-gold metal stack. Si/Ta-based ohmic contact exhibited low contact...

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Bibliographic Details
Main Authors: Arulkumaran, Subramaniam, Ng, Geok Ing, Vicknesh, Sahmuganathan, Wang, Hong, Ang, Kian Siong, Kumar, Chandramohan Manoj, Teo, Khoon Leng, Ranjan, Kumud
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2015
Subjects:
DRNTU::Science::Physics
Online Access:https://hdl.handle.net/10356/100489
http://hdl.handle.net/10220/25701

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