Low threshold current density and high characteristic temperature narrow-stripe native oxide-confined 1.3-μm InGaAsN triple quantum well lasers
InGaAsN triple-quantum-well (TQW) 4-μm ridge waveguide (RWG) lasers were fabricated using pulsed anodic oxidation. High output power of 290 mW (both facets), low transparency current density of 389 A/cm2 (equivalent to 130 A/cm2/well) and high characteristic temperature (T0) of 157.2 K were obta...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/100600 http://hdl.handle.net/10220/17972 |
| Summary: | InGaAsN triple-quantum-well (TQW) 4-μm ridge waveguide
(RWG) lasers were fabricated using pulsed anodic oxidation. High output
power of 290 mW (both facets), low transparency current density of 389
A/cm2 (equivalent to 130 A/cm2/well) and high characteristic temperature
(T0) of 157.2 K were obtained from the InGaAsN TQW RWG lasers.
InGaAsN single-quantum-well (SQW) 4-μm RWG lasers were also
fabricated for comparison. Extremely low threshold current (Ith) of 15.7 mA
was obtained from InGaAsN SQW RWG laser (4 × 500 μm2). However,
InGaAsN SQW laser showed strong temperature dependence of Ith and
presented much lower T0 than that of InGaAsN TQW lasers. Ridge height
effects on the T0 of RWG lasers were also demonstrated. |
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