Low threshold current density and high characteristic temperature narrow-stripe native oxide-confined 1.3-μm InGaAsN triple quantum well lasers
InGaAsN triple-quantum-well (TQW) 4-μm ridge waveguide (RWG) lasers were fabricated using pulsed anodic oxidation. High output power of 290 mW (both facets), low transparency current density of 389 A/cm2 (equivalent to 130 A/cm2/well) and high characteristic temperature (T0) of 157.2 K were obta...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2013
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| Online Access: | https://hdl.handle.net/10356/100600 http://hdl.handle.net/10220/17972 |
| _version_ | 1811677620734001152 |
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| author | Liu, C. Y. Teo, Ronnie J. W. Yuan, S. Yoon, Soon Fatt Fan, Weijun |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Liu, C. Y. Teo, Ronnie J. W. Yuan, S. Yoon, Soon Fatt Fan, Weijun |
| author_sort | Liu, C. Y. |
| collection | NTU |
| description | InGaAsN triple-quantum-well (TQW) 4-μm ridge waveguide
(RWG) lasers were fabricated using pulsed anodic oxidation. High output
power of 290 mW (both facets), low transparency current density of 389
A/cm2 (equivalent to 130 A/cm2/well) and high characteristic temperature
(T0) of 157.2 K were obtained from the InGaAsN TQW RWG lasers.
InGaAsN single-quantum-well (SQW) 4-μm RWG lasers were also
fabricated for comparison. Extremely low threshold current (Ith) of 15.7 mA
was obtained from InGaAsN SQW RWG laser (4 × 500 μm2). However,
InGaAsN SQW laser showed strong temperature dependence of Ith and
presented much lower T0 than that of InGaAsN TQW lasers. Ridge height
effects on the T0 of RWG lasers were also demonstrated. |
| first_indexed | 2024-10-01T02:40:16Z |
| format | Journal Article |
| id | ntu-10356/100600 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:40:16Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/1006002020-06-01T10:13:52Z Low threshold current density and high characteristic temperature narrow-stripe native oxide-confined 1.3-μm InGaAsN triple quantum well lasers Liu, C. Y. Teo, Ronnie J. W. Yuan, S. Yoon, Soon Fatt Fan, Weijun School of Electrical and Electronic Engineering School of Materials Science & Engineering DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics InGaAsN triple-quantum-well (TQW) 4-μm ridge waveguide (RWG) lasers were fabricated using pulsed anodic oxidation. High output power of 290 mW (both facets), low transparency current density of 389 A/cm2 (equivalent to 130 A/cm2/well) and high characteristic temperature (T0) of 157.2 K were obtained from the InGaAsN TQW RWG lasers. InGaAsN single-quantum-well (SQW) 4-μm RWG lasers were also fabricated for comparison. Extremely low threshold current (Ith) of 15.7 mA was obtained from InGaAsN SQW RWG laser (4 × 500 μm2). However, InGaAsN SQW laser showed strong temperature dependence of Ith and presented much lower T0 than that of InGaAsN TQW lasers. Ridge height effects on the T0 of RWG lasers were also demonstrated. Published version 2013-12-02T07:39:32Z 2019-12-06T20:25:09Z 2013-12-02T07:39:32Z 2019-12-06T20:25:09Z 2005 2005 Journal Article Liu, C. Y., Yoon, S. F., Fan, W., Teo, J. W. R., & Yuan, S. (2005). Low threshold current density and high characteristic temperature narrow-stripe native oxide-confined 1.3-μm InGaAsN triple quantum well lasers. Optics Express, 13(22), 9045-9051. 1094-4087 https://hdl.handle.net/10356/100600 http://hdl.handle.net/10220/17972 10.1364/OPEX.13.009045 en Optics express © 2005 Optical Society of America. This paper was published in Optics Express and is made available as an electronic reprint (preprint) with permission of Optical Society of America. The paper can be found at the following official DOI: [http://dx.doi.org/10.1364/OPEX.13.009045]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 7 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics Liu, C. Y. Teo, Ronnie J. W. Yuan, S. Yoon, Soon Fatt Fan, Weijun Low threshold current density and high characteristic temperature narrow-stripe native oxide-confined 1.3-μm InGaAsN triple quantum well lasers |
| title | Low threshold current density and high characteristic temperature narrow-stripe native oxide-confined 1.3-μm InGaAsN triple quantum well lasers |
| title_full | Low threshold current density and high characteristic temperature narrow-stripe native oxide-confined 1.3-μm InGaAsN triple quantum well lasers |
| title_fullStr | Low threshold current density and high characteristic temperature narrow-stripe native oxide-confined 1.3-μm InGaAsN triple quantum well lasers |
| title_full_unstemmed | Low threshold current density and high characteristic temperature narrow-stripe native oxide-confined 1.3-μm InGaAsN triple quantum well lasers |
| title_short | Low threshold current density and high characteristic temperature narrow-stripe native oxide-confined 1.3-μm InGaAsN triple quantum well lasers |
| title_sort | low threshold current density and high characteristic temperature narrow stripe native oxide confined 1 3 μm ingaasn triple quantum well lasers |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics |
| url | https://hdl.handle.net/10356/100600 http://hdl.handle.net/10220/17972 |
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