Study of the interdiffusion effect on the band structures of Si[sub 1−x]Ge[sub x]∕Si quantum wells
We investigated the influence of thermal interdiffusion on the band structures of Si1−xGex /Si single quantum wells SQWs with a well width of 125 Å and Ge concentration x=0.3. Rapid thermal annealing with the temperatures of 750 and 800 °C leads to substantial interdiffusion indicated by a sign...
| Main Authors: | , , , , , |
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| Format: | Journal Article |
| Language: | English |
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2013
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| Online Access: | https://hdl.handle.net/10356/100603 http://hdl.handle.net/10220/17896 |
| _version_ | 1811691452527280128 |
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| author | Dang, Y. X. Fan, Weijun Lu, F. Wang, H. Zhang, Dao Hua Yoon, Soon Fatt |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Dang, Y. X. Fan, Weijun Lu, F. Wang, H. Zhang, Dao Hua Yoon, Soon Fatt |
| author_sort | Dang, Y. X. |
| collection | NTU |
| description | We investigated the influence of thermal interdiffusion on the band structures of Si1−xGex /Si single
quantum wells SQWs with a well width of 125 Å and Ge concentration x=0.3. Rapid thermal
annealing with the temperatures of 750 and 800 °C leads to substantial interdiffusion indicated by
a significant photoluminescence PL blueshift as large as 46 meV. The effect is modeled by a
Si–Ge atomic interdiffusion at the heterointerface. The band structures and optical transitions of QW
after interdiffusion were calculated based on an error function distribution and the 6+2-band k· p
method. The diffusion lengths of the intermixing process are deduced from the PL shift. The thermal
dependence of the interdiffusion coefficients follows the Arrhenius law. An activation energy Ea
for interdiffusion of 2.75 eV is obtained. Our investigation indicates that the 6+2-band k· p
formalism is valid for interdiffused Si1−xGex/Si QWs. |
| first_indexed | 2024-10-01T06:20:07Z |
| format | Journal Article |
| id | ntu-10356/100603 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:20:07Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/1006032020-03-07T14:00:28Z Study of the interdiffusion effect on the band structures of Si[sub 1−x]Ge[sub x]∕Si quantum wells Dang, Y. X. Fan, Weijun Lu, F. Wang, H. Zhang, Dao Hua Yoon, Soon Fatt School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering We investigated the influence of thermal interdiffusion on the band structures of Si1−xGex /Si single quantum wells SQWs with a well width of 125 Å and Ge concentration x=0.3. Rapid thermal annealing with the temperatures of 750 and 800 °C leads to substantial interdiffusion indicated by a significant photoluminescence PL blueshift as large as 46 meV. The effect is modeled by a Si–Ge atomic interdiffusion at the heterointerface. The band structures and optical transitions of QW after interdiffusion were calculated based on an error function distribution and the 6+2-band k· p method. The diffusion lengths of the intermixing process are deduced from the PL shift. The thermal dependence of the interdiffusion coefficients follows the Arrhenius law. An activation energy Ea for interdiffusion of 2.75 eV is obtained. Our investigation indicates that the 6+2-band k· p formalism is valid for interdiffused Si1−xGex/Si QWs. Published version 2013-11-29T03:16:51Z 2019-12-06T20:25:14Z 2013-11-29T03:16:51Z 2019-12-06T20:25:14Z 2006 2006 Journal Article Dang, Y. X., Fan, W., Lu, F., Wang, H., Zhang, D. H., & Yoon, S. F. (2006). Study of the interdiffusion effect on the band structures of Si[sub 1−x]Ge[sub x]∕Si quantum wells. Journal of applied physics, 99(7), 076108. 0021-8979 https://hdl.handle.net/10356/100603 http://hdl.handle.net/10220/17896 10.1063/1.2186983 en Journal of applied physics © 2006 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.2186983]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 3 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Dang, Y. X. Fan, Weijun Lu, F. Wang, H. Zhang, Dao Hua Yoon, Soon Fatt Study of the interdiffusion effect on the band structures of Si[sub 1−x]Ge[sub x]∕Si quantum wells |
| title | Study of the interdiffusion effect on the band structures of Si[sub 1−x]Ge[sub x]∕Si quantum wells |
| title_full | Study of the interdiffusion effect on the band structures of Si[sub 1−x]Ge[sub x]∕Si quantum wells |
| title_fullStr | Study of the interdiffusion effect on the band structures of Si[sub 1−x]Ge[sub x]∕Si quantum wells |
| title_full_unstemmed | Study of the interdiffusion effect on the band structures of Si[sub 1−x]Ge[sub x]∕Si quantum wells |
| title_short | Study of the interdiffusion effect on the band structures of Si[sub 1−x]Ge[sub x]∕Si quantum wells |
| title_sort | study of the interdiffusion effect on the band structures of si sub 1 x ge sub x si quantum wells |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/100603 http://hdl.handle.net/10220/17896 |
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