Tunneling field-effect transistor with Ge/In0.53Ga0.47As heterostructure as tunneling junction

Tunneling field-effect transistor with Ge/In0.53Ga0.47As heterostructure as tunneling junction

High quality epitaxial germanium (Ge) was successfully grown on In0.53Ga0.47As substrate using a metal-organic chemical vapor deposition tool. The valence band offset ΔEV between the Ge layer and In0.53Ga0.47As determined by high-resolution x-ray photoelectron spectroscopy was found to be 0.5 ± 0.1 ...

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Bibliographic Details
Main Authors: Hu, Hailong., Guo, Pengfei, Yang, Yue, Cheng, Yuanbing, Han, Genquan, Pan, Jisheng, Ivana, Zhang, Zheng, Shen, Zexiang, Chia, Ching Kean, Yeo, Yee-Chia
Other Authors: School of Physical and Mathematical Sciences
Format: Journal Article
Language:English
Published: 2013
Online Access:https://hdl.handle.net/10356/100689
http://hdl.handle.net/10220/11036

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