Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition
Si/Si0.66Ge0.34 coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHVCVD) system. The samples were characterized using high resolution x-ray diffraction (HRXRD), crosssectional...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/100764 http://hdl.handle.net/10220/18135 |
| Summary: | Si/Si0.66Ge0.34 coupled quantum well
(CQW) structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHVCVD)
system. The samples were characterized using
high resolution x-ray diffraction (HRXRD), crosssectional
transmission electron microscopy (XTEM)
and photoluminescence (PL) spectroscopy. Blue shift
in PL peak energy due to interwell coupling was
observed in the CQWs following increase in the Si
barrier thickness. The Si/SiGe heterostructure growth
process and theoretical band structure model was validated
by comparing the energy of the no-phonon peak
calculated by the 6 + 2-band k p method with experimental
PL data. Close agreement between theoretical calculations and experimental data was obtained. |
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