Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition
Si/Si0.66Ge0.34 coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHVCVD) system. The samples were characterized using high resolution x-ray diffraction (HRXRD), crosssectional...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/100764 http://hdl.handle.net/10220/18135 |