Annealing effects on the optical properties of a GaInNAs double barrier quantum well infrared photodetector
Annealing effects in a GaInNAs/AlAs/AlGaAs double barrier quantum well infrared photo detector were studied by x-ray diffraction, photoluminescence PL , and photoluminescence excitation PLE spectroscopy. After annealing at 650 °C, the GaInNAs PL peak shows stronger PL intensity and blueshift o...
| Үндсэн зохиолчид: | , , , , |
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| Бусад зохиолчид: | |
| Формат: | Journal Article |
| Хэл сонгох: | English |
| Хэвлэсэн: |
2013
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| Нөхцлүүд: | |
| Онлайн хандалт: | https://hdl.handle.net/10356/100800 http://hdl.handle.net/10220/18119 |