Study of interdiffusion in GaAsSbN∕GaAs quantum well structure by ten-band k⋅p method
The effect of annealing on the photoluminescence (PL) in GaAsSbN/GaAs quantum wells QWs grown by solid-source molecular-beam epitaxy has been investigated. The annealing time and temperature are 5 min and 650–750 °C, respectively. Low-temperature (4K) PL peaks shift to higher energies with the annea...
| Главные авторы: | , , , , , |
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| Другие авторы: | |
| Формат: | Journal Article |
| Язык: | English |
| Опубликовано: |
2013
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| Предметы: | |
| Online-ссылка: | https://hdl.handle.net/10356/100807 http://hdl.handle.net/10220/18005 |
| Итог: | The effect of annealing on the photoluminescence (PL) in GaAsSbN/GaAs quantum wells QWs grown by solid-source molecular-beam epitaxy has been investigated. The annealing time and temperature are 5 min and 650–750 °C, respectively. Low-temperature (4K) PL peaks shift to higher energies with the annealing temperatures. An As–Sb atomic interdiffusion at the heterointerface is proposed to model this effect. The compositional profile of the QW after interdiffusion is described by an error function distribution and calculated by a ten-band k· p method. The estimated interdiffusion constants D are ~10−17–10−16 cm2 / s in the above temperature range and an activation energy of 1±0.4 eV is obtained. |
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